The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN /AlGaN interface

Solid State Communications

Volumn 99, Issue 3, 1996, Pages 195-199

  Knap, W ^a   Alause, H ^a   Bluet, J M ^a   Camassel, J ^a   Young, J ^b   Asif Khan, M ^b   Chen, Q ^b   Huant, S ^c   Shur, M ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b APA Optronics   (United States)

^c CNRS   (France)

^d University of Virginia   (United States)

Author keywords

A. Heterojunctions; A. Semiconductors; D. Cyclotron resonance; D. Electronic band structure

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CYCLOTRON RESONANCE; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ELECTRON CYCLOTRON MASS; NONPARABOLICITY; POLARON EFFECTS; TRIANGULAR WELL APPROXIMATION; TWO DIMENSIONAL ELECTRONS;

ELECTRONS;

EID: 0030194028     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00232-3     Document Type: Article

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