Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Sirenko, A A ^a   Kazimirov, A ^b   Huang, R ^b   Bilderback, D H ^b   O'Malley, S ^a   Gupta, V ^c   Bacher, K ^c   Ketelsen, L J P ^c   Ougazzaden, A ^d  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b Department of Molecular Biology and Genetics   (United States)

^c TRIQUINT SEMICONDUCTOR   (United States)

^d SUPELEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LASER STRUCTURES; PHOTOLUMINESCENCE (PL) EMISSIONS; SELECTIVE AREA GROWTH (SAG); STRUCTURAL PROPERTIES;

ALGORITHMS; COMPOSITION; LIGHT EMITTING DIODES; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20444489962     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862769     Document Type: Article

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