Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 199, Issue , 2003, Pages 15-18

  Matsui, J ^a   Tsusaka, Y ^a   Yokoyama, K ^a   Takeda, S ^a   Katou, M ^a   Kurihara, H ^a   Watanabe, K ^a   Kagoshima, Y ^a   Kimura, S ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Semiconductor crystal; Strain; X ray microbeam; X ray rocking curve

Indexed keywords

ELECTRONIC EQUIPMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; STRAIN; SYNCHROTRON RADIATION; X RAY OPTICS; X RAYS;

SEMICONDUCTOR CRYSTALS;

CRYSTALS;

EID: 0037243210     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01406-4     Document Type: Conference Paper

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