10 Gbit/s transmitter based on directly modulated InGaAlAs laser operating up to 126°C

Electronics Letters

Volumn 39, Issue 23, 2003, Pages 1653-1654

  Paiella, R ^a   Kiely, P A ^a   Ougazzaden, A ^a   Stayt Jr , J W ^a   Sirenko, A ^a   Derkits, G ^a   Glogovsky, K ^a   Wamsley, C C ^a,b   Lentz, C W ^a   Eng, L E ^a   Ketelsen, L J P ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b SCHAFER CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CONTROL SYSTEMS; HIGH TEMPERATURE OPERATIONS; LIGHT EXTINCTION; MODULATION; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

EXTINCTION RATIO; FABRY-PEROT LASER;

TRANSMITTERS;

EID: 0344981282     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031062     Document Type: Article

References (6)

1. Kozlov, V.: 'Target all markets for 10 Gb/s transponder success'. RHK Report, 2002
2. Zah, C.E., et al.: 'High-performance uncooled 1.3 μm AlGaInAs/InP strained-layer quantum-well lasers for subscriber loop applications', IEEE J. Quantum Electron., 1994, 30, pp. 511-521
3. Wang, M.C., et al.; 'Ultra-high temperature and ultra-high speed operation of 1.3 μm strain-compensated AlGaInAs/InP uncooled laser diodes', Electron. Lett., 1995, 31, pp. 1584-1585
4. Peral, E., et al.: '10 Gb/s transmission over 3.3 km using an uncooled InAlGaAs Fabry-Perot laser operating up to 85°C'. Proc. OFC 2002, Anaheim, CA, USA, 2002, pp. 421-422
5. Nakahara, K., et al.: '115°C, 12.5-Gb/s direct modulation of 1.3 μm InGaAlAs-MQW RWG DFB laser with notch-free grating structure for datacom applications'. Proc. OFC 2003, Atlanta, CA, USA, 2003, PD40-1
6. Osenbach, J.W. et al.: 'Low cost/high volume laser modules using silicon optical bench technology'. Proc. ECTC 1998, Seattle, WA, USA, 1998, pp. 581-587