Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 38-45

  Sirenko, A A ^a   Reynolds, C L ^a   Peticolas, L J ^a   Ougazzaden, A ^a   Kazimirov, A ^b   Huang, Rong ^b   Fontes, E ^b   Bilderback, D ^b  

^a AGERE SYSTEMS   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

A1. Synchrotron radiation; A1. X ray fluorescence; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. InGaAsP InP; B2. Semiconducting quaternary alloys

Indexed keywords

FLUORESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SYNCHROTRON RADIATION; WAVELENGTH DIVISION MULTIPLEXING; X RAY ANALYSIS;

SELECTIVE EPITAXY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0037949010     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00996-5     Document Type: Article

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