Controlled group v intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4330-4335

  Teng, J H ^a   Dong, J R ^a   Chua, S J ^a   Lai, M Y ^a   Foo, B C ^a   Thompson, D A ^b   Robinson, B J ^b   Lee, A S W ^b   Hazell, John ^b   Sproule, Irwin ^c  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b MCMASTER UNIVERSITY   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BAND-GAP TUNING; BLUE SHIFT; HIGH CONCENTRATION; INGAASP; INP; LOW-TEMPERATURE GROWN; LOW-TEMPERATURE INP; MULTI-QUANTUM WELL LASERS; PHASE TUNING; QUANTUM WELL INTERMIXING; QUANTUM WELL STRUCTURES; SECONDARY IONS; SURFACE COVERAGES; TIME OF FLIGHT; TUNING RANGES; TWO SECTION;

DIELECTRIC FILMS; ENERGY GAP; FABRICATION; GALLIUM; LASER TUNING; LASERS; MASS SPECTROMETRY; PHOSPHORUS; QUANTUM WELL LASERS; REFRACTIVE INDEX; TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18744404773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1508428     Document Type: Article

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