메뉴 건너뛰기




Volumn 35, Issue 2-4, 1997, Pages 263-288

Selective area growth on planar masked InP substrates by metal organic vapour phase epitaxy (MOVPE)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0031368153     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-8974(98)00003-5     Document Type: Article
Times cited : (35)

References (57)
  • 3
    • 0027108769 scopus 로고
    • Current status of selective area epitaxy by OMCVD
    • Rajaram Bhat, "Current status of selective area epitaxy by OMCVD", J. Crystal Growth 120 (1992) p362
    • (1992) J. Crystal Growth , vol.120 , pp. 362
    • Bhat, R.1
  • 4
    • 0025791469 scopus 로고
    • Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy
    • S. Iwai, T. Meguro, Y. Aoyagi and T. Miyoshi, "Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy", J. Crystal Growth 107 (1991) p 136
    • (1991) J. Crystal Growth , vol.107 , pp. 136
    • Iwai, S.1    Meguro, T.2    Aoyagi, Y.3    Miyoshi, T.4
  • 5
    • 0027614568 scopus 로고
    • Non-planar and masked-area epitaxy by organometallic chemical vapour deposition
    • Rajaram Bhat, "Non-planar and masked-area epitaxy by organometallic chemical vapour deposition", Semicond. Sci. Technol. 8 (1993) p 984
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 984
    • Bhat, R.1
  • 6
    • 0027614777 scopus 로고
    • Selective-area and sidewall growth by atomic layer epitaxy
    • S.M. Bedair, "Selective-area and sidewall growth by atomic layer epitaxy", Semicond. Sci. Technol. 8 (1993) p 1052
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 1052
    • Bedair, S.M.1
  • 7
    • 0030680045 scopus 로고    scopus 로고
    • InP growth on ion-implanted InP substrate : A new method to achieve selective area MOVPE
    • A. Behres, H. Werner, A. Kohl, K. Heime, "InP growth on ion-implanted InP substrate : a new method to achieve selective area MOVPE", J. Crystal Growth 170 (1997) p 655
    • (1997) J. Crystal Growth , vol.170 , pp. 655
    • Behres, A.1    Werner, H.2    Kohl, A.3    Heime, K.4
  • 10
    • 0003917292 scopus 로고
    • Prentice Hall International series in optoelectronics, New York
    • D. Wood, "Optoelectronic Semiconductor Devices", Prentice Hall International series in optoelectronics, New York, 1994
    • (1994) Optoelectronic Semiconductor Devices
    • Wood, D.1
  • 11
    • 0025791034 scopus 로고
    • Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE
    • O. Kayser, "Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE", J. Crystal Growth 107 (1991) p 989
    • (1991) J. Crystal Growth , vol.107 , pp. 989
    • Kayser, O.1
  • 14
    • 51249178356 scopus 로고
    • Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy
    • R. T. Huang, C.L. Jiang, A. Appelbaum, D. Renner and S.W. Zehr, "Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy", J. Electronic Materials 19, 1313 (1990)
    • (1990) J. Electronic Materials , vol.19 , pp. 1313
    • Huang, R.T.1    Jiang, C.L.2    Appelbaum, A.3    Renner, D.4    Zehr, S.W.5
  • 16
    • 0041842382 scopus 로고    scopus 로고
    • French Patent pending No. 90.11615, 20/09/90
    • R. Azoulay and L. Dugrand, French Patent pending No. 90.11615, 20/09/90
    • Azoulay, R.1    Dugrand, L.2
  • 18
    • 0023455742 scopus 로고
    • Mass spectrometric studies of phosphine pyrolysis and OMVPE growth of InP
    • C.A. Larsen, N.I. Buchan and G.B. Stringfellow, "Mass spectrometric studies of phosphine pyrolysis and OMVPE growth of InP", J. Crystal Growth 85 (1987) p148
    • (1987) J. Crystal Growth , vol.85 , pp. 148
    • Larsen, C.A.1    Buchan, N.I.2    Stringfellow, G.B.3
  • 21
    • 0027906407 scopus 로고
    • Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures
    • T. Sasaki, M. Kitamura and Ikuo Mito, "Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures", J. Crystal Growth 132 (1993) p 435
    • (1993) J. Crystal Growth , vol.132 , pp. 435
    • Sasaki, T.1    Kitamura, M.2    Mito, I.3
  • 22
    • 0027617191 scopus 로고
    • Selective-area growth of III/V semiconductors in chemical beam epitaxy
    • H. Heinecke, A. Milde, B. Baur and R. Matz, "Selective-area growth of III/V semiconductors in chemical beam epitaxy", Semicond. Sci. Technol.8 (1993) p 1023
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 1023
    • Heinecke, H.1    Milde, A.2    Baur, B.3    Matz, R.4
  • 23
    • 0030085833 scopus 로고    scopus 로고
    • Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD
    • M. Ida, N. Shigekawa, T. Furuta, H. Ito and T. Kobayashi, "Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD", J. Crystal Growth 158 (1996) p 437
    • (1996) J. Crystal Growth , vol.158 , pp. 437
    • Ida, M.1    Shigekawa, N.2    Furuta, T.3    Ito, H.4    Kobayashi, T.5
  • 25
    • 0028516416 scopus 로고
    • A simplified model describing enhanced growth rates during vapor phase selective epitaxy
    • M. F. Zybura and S. H. Jones, J.M. Duva and J. Durgavich, "A simplified model describing enhanced growth rates during vapor phase selective epitaxy", J. Electronic Materials Vol. 23 No. 10 (1994) p 1055
    • (1994) J. Electronic Materials , vol.23 , Issue.10 , pp. 1055
    • Zybura, M.F.1    Jones, S.H.2    Duva, J.M.3    Durgavich, J.4
  • 26
    • 0029632813 scopus 로고
    • A diffusion model for selective-area epitaxy by metalorganic chemical vapor deposition
    • B. Korgel and R.F. Hicks, "A diffusion model for selective-area epitaxy by metalorganic chemical vapor deposition", J. Crystal Growth 151 (1995) p 204
    • (1995) J. Crystal Growth , vol.151 , pp. 204
    • Korgel, B.1    Hicks, R.F.2
  • 27
    • 0029403991 scopus 로고
    • Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates
    • T. Fujii, M. Ekawa and S. Yamazaki, "Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates", J. Crystal Growth 156 (1995) p 59
    • (1995) J. Crystal Growth , vol.156 , pp. 59
    • Fujii, T.1    Ekawa, M.2    Yamazaki, S.3
  • 28
    • 0000890383 scopus 로고
    • Origin of compositional modulation of InGaAs in selective area metalorganic vapor phase epitaxy
    • Nov
    • T. Fujii and M. Ekawa, "Origin of compositional modulation of InGaAs in selective area metalorganic vapor phase epitaxy", J. Appl. Physics 78 (9) Nov 1995 p 5373
    • (1995) J. Appl. Physics , vol.78 , Issue.9 , pp. 5373
    • Fujii, T.1    Ekawa, M.2
  • 29
    • 0026366954 scopus 로고
    • Analysis of MOCVD of GaAs on patterned substrates
    • D.G. Coronell and K. F. Jensen, "Analysis of MOCVD of GaAs on patterned substrates", J. Crystal Growth 114 (1991) p 581
    • (1991) J. Crystal Growth , vol.114 , pp. 581
    • Coronell, D.G.1    Jensen, K.F.2
  • 30
    • 0028761882 scopus 로고
    • Simulation of species transport during growth of compound semiconductors over patterned substrates
    • YU. N. Makarov, M.S. Ramm, E.A. Subashieva, A.I. Zhmakin, "Simulation of species transport during growth of compound semiconductors over patterned substrates", J. Crystal Growth 145 (1994) p 271
    • (1994) J. Crystal Growth , vol.145 , pp. 271
    • Makarov, Y.U.N.1    Ramm, M.S.2    Subashieva, E.A.3    Zhmakin, A.I.4
  • 31
    • 0038159751 scopus 로고
    • GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures
    • July
    • Y.D. Galeuchet, P. Roentgen, and V. Graf, "GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures", J. Appl. Physics 68 (2) July 1990 p 560
    • (1990) J. Appl. Physics , vol.68 , Issue.2 , pp. 560
    • Galeuchet, Y.D.1    Roentgen, P.2    Graf, V.3
  • 32
    • 0025791260 scopus 로고
    • Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates
    • Y.D. Galeuchet and P. Roentgen, "Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates", J. Crystal Growth 107 (1991) p 147
    • (1991) J. Crystal Growth , vol.107 , pp. 147
    • Galeuchet, Y.D.1    Roentgen, P.2
  • 36
    • 0027906322 scopus 로고
    • Selective organometallic vapor phase epitaxy of Ga and in compounds: A comparison of TMin and TEGa versus TMin and TMGa
    • C. Caneau, R. Bhat, C.C. Chang, K. Kash, and M.A. Koza, "Selective organometallic vapor phase epitaxy of Ga and In compounds: a comparison of TMIn and TEGa versus TMIn and TMGa", J. Crystal Growth 132 (1993) p 364
    • (1993) J. Crystal Growth , vol.132 , pp. 364
    • Caneau, C.1    Bhat, R.2    Chang, C.C.3    Kash, K.4    Koza, A.M.A.5
  • 37
    • 0026910592 scopus 로고
    • Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy
    • H. Sugiura, T. Nishida, R. Iga, T. Yamada and T. Tamamura, "Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy", J. Crystal Growth 121 (1992) p 579
    • (1992) J. Crystal Growth , vol.121 , pp. 579
    • Sugiura, H.1    Nishida, T.2    Iga, R.3    Yamada, T.4    Tamamura, T.5
  • 38
    • 0030653782 scopus 로고    scopus 로고
    • Migration-controlled narrow-stripe selective MOVPE for high-quality InGaAsP/InGaAsP MQWs
    • K. Kudo, T. Sasaki, M. Yamaguchi, "Migration-controlled narrow-stripe selective MOVPE for high-quality InGaAsP/InGaAsP MQWs", J. Crystal Growth 170 (1997) p 634
    • (1997) J. Crystal Growth , vol.170 , pp. 634
    • Kudo, K.1    Sasaki, T.2    Yamaguchi, M.3
  • 39
    • 0030687288 scopus 로고    scopus 로고
    • Stripe direction dependence in selective area growth of InGaAsP using TBP and TBA
    • Cape Cod, Massachusetts, USA
    • In Kim, W-J. Choi, and P.D. Dapkus, "Stripe direction dependence in selective area growth of InGaAsP using TBP and TBA", conference proceedings IPRM '97 Hyannis, Cape Cod, Massachusetts, USA
    • Conference Proceedings IPRM '97 Hyannis
    • Kim, I.1    Choi, W.-J.2    Dapkus, P.D.3
  • 40
    • 0030261288 scopus 로고    scopus 로고
    • Novel in situ optical monitoring method for selective area metalorganic vapor phase epitaxy
    • Y. Ishikawa, K. Nakakoshi, T. Fukui, "Novel in situ optical monitoring method for selective area metalorganic vapor phase epitaxy", J. Crystal Growth 167 (1996) p 434
    • (1996) J. Crystal Growth , vol.167 , pp. 434
    • Ishikawa, Y.1    Nakakoshi, K.2    Fukui, T.3
  • 42
    • 0028761883 scopus 로고
    • 1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy
    • M. Suzuki, M. Aoki, T. Tsuchiya, T. Taniwatari, "1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy", J. Crystal Growth 145 (1994) p 249
    • (1994) J. Crystal Growth , vol.145 , pp. 249
    • Suzuki, M.1    Aoki, M.2    Tsuchiya, T.3    Taniwatari, T.4
  • 45
    • 0028549466 scopus 로고
    • A multifrequency waveguide grating laser by selective area epitaxy
    • Nov
    • C.H. Joyner, M. Zirngibl, and J.P. Meester, "A multifrequency waveguide grating laser by selective area epitaxy", IEEE Photonics Technology Letters Vol 6, No 11 Nov 1994, p 1277
    • (1994) IEEE Photonics Technology Letters , vol.6 , Issue.11 , pp. 1277
    • Joyner, C.H.1    Zirngibl, M.2    Meester, J.P.3
  • 46
    • 0028762143 scopus 로고
    • Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition
    • T. Itagaki, T. Kimura, K. Goto, Y. Mihashi, S. Takamiya, S. Mitsui, "Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition ",J. Crystal Growth 145 (1994) p 256
    • (1994) J. Crystal Growth , vol.145 , pp. 256
    • Itagaki, T.1    Kimura, T.2    Goto, K.3    Mihashi, Y.4    Takamiya, S.5    Mitsui, S.6
  • 47
    • 0029217409 scopus 로고    scopus 로고
    • Simultaneous thickness and compositional uniformity in selective MOVPE growth
    • Sapporo, Hokkaido, Japan
    • M. Ekawa, T. Fujii, and S. Yamazaki, "Simultaneous thickness and compositional uniformity in selective MOVPE growth", conference proceedings IPRM '95 May 9-13, Sapporo, Hokkaido, Japan
    • Conference Proceedings IPRM '95 May 9-13
    • Ekawa, M.1    Fujii, T.2    Yamazaki, S.3
  • 49
    • 0028377196 scopus 로고
    • New photonic device integration by selective area MOVPE and its application to optical modulator/laser integration
    • Feb
    • M. Aoki, M. Suzuki, T. Taniwatari, H. Sano, and T. Kawano, "New photonic device integration by selective area MOVPE and its application to optical modulator/laser integration", Microwave and Optical Technology Letters/ Vol. 7, No. 3, Feb 1994 p 132
    • (1994) Microwave and Optical Technology Letters , vol.7 , Issue.3 , pp. 132
    • Aoki, M.1    Suzuki, M.2    Taniwatari, T.3    Sano, H.4    Kawano, T.5
  • 50
    • 0026882319 scopus 로고
    • High extinction ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique
    • June
    • M. Aoki, M. Takahashi, M. Suzuki, H. Sano, K. Uomi, T. Kawano, and A. Takai, "High extinction ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique", IEEE Photonics Technology Letters, Vol. 4, No. 6, June 1992, p 580
    • (1992) IEEE Photonics Technology Letters , vol.4 , Issue.6 , pp. 580
    • Aoki, M.1    Takahashi, M.2    Suzuki, M.3    Sano, H.4    Uomi, K.5    Kawano, T.6    Takai, A.7
  • 51
    • 0029777129 scopus 로고    scopus 로고
    • Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE
    • Jan
    • H. Yamazaki, Y. Sakata, M. Yamaguchi Y. Inomoto and K. Komatsu, "Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE", Electronics Letters Jan 1996 Vol. 32 No. 2 ,p 109
    • (1996) Electronics Letters , vol.32 , Issue.2 , pp. 109
    • Yamazaki, H.1    Sakata, Y.2    Yamaguchi, M.3    Inomoto K Komatsu, Y.4
  • 54
    • 0030677188 scopus 로고    scopus 로고
    • Low-threshold strained multi quantum well lasers fabricated by selective metalorganic vapor phase epitaxy without a semiconductor etching process
    • Y. Sakata, T. Morimoto, Y. Inomoto, H. Hasumi, "Low-threshold strained multi quantum well lasers fabricated by selective metalorganic vapor phase epitaxy without a semiconductor etching process", J. Crystal Growth 170 (1997) p465
    • (1997) J. Crystal Growth , vol.170 , pp. 465
    • Sakata, Y.1    Morimoto, T.2    Inomoto, Y.3    Hasumi, H.4
  • 55
    • 0030104306 scopus 로고    scopus 로고
    • A transceiver PIC for bidirectional optical communication fabricated by bandgap energy controlled selective MOVPE
    • March
    • T. Takeuchi, T. Sasaki, M. Hayashi, K. Hamamoto, K. Makita, K. Taguchi, and K. Komatsu, "A transceiver PIC for bidirectional optical communication fabricated by bandgap energy controlled selective MOVPE", IEEE Photonics Technology Letters Vol. 8 No. 3 March 1996 p 361
    • (1996) IEEE Photonics Technology Letters , vol.8 , Issue.3 , pp. 361
    • Takeuchi, T.1    Sasaki, T.2    Hayashi, M.3    Hamamoto, K.4    Makita, K.5    Taguchi, K.6    Komatsu, K.7
  • 56
    • 0008928073 scopus 로고
    • In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
    • May
    • Y. D. Galeuchet, H. Rothuizen, and P. Roentgen, " In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy", Appl. Phys. Letters 58 (21), May 1991 p 2423
    • (1991) Appl. Phys. Letters , vol.58 , Issue.21 , pp. 2423
    • Galeuchet, Y.D.1    Rothuizen, H.2    Roentgen, P.3
  • 57
    • 0030680371 scopus 로고    scopus 로고
    • Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers
    • L. Silvestre, A. Ougazzaden, D. Delprat, A. Ramdane, C. Daguet, G. Patriarche, "Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers", J. Crystal Growth 170 (1997) p 639
    • (1997) J. Crystal Growth , vol.170 , pp. 639
    • Silvestre, L.1    Ougazzaden, A.2    Delprat, D.3    Ramdane, A.4    Daguet, C.5    Patriarche, G.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.