Grown-in lattice defects and diffusion in Czochralski-grown germanium

Defect and Diffusion Forum

Volumn 230-232, Issue , 2004, Pages 149-176

  Vanhellemont, J ^a   De Gryse, O ^a   Hens, S ^a   Vanmeerbeek, P ^a   Poelman, D ^a   Clauws, P ^a   Simoen, E ^b   Claeys, C ^b,c   Romandic, I ^d   Theuwis, A ^d   Raskin, G ^d   Vercammen, H ^d   Mijlemans, P ^d  

^a GHENT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

^d UMICORE   (Belgium)

Author keywords

Carbon; Copper; Diffusion; Dislocations; Germanium; Hydrogen; Iron; Nickel; Nitrogen; Oxygen; Point Defects; Vacancies

Indexed keywords

CARBON; COPPER; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DIFFUSION; DISLOCATIONS (CRYSTALS); HYDROGEN; IRON; NICKEL; NITROGEN; OXYGEN; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM ON INSULATOR (GEOI); HIGH VOLTAGE TRANSMISSION ELECTRON MICROSCOPY (HVEM); SILICON TECHNOLOGY; VACANCIES;

SEMICONDUCTING GERMANIUM;

EID: 20244382848     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.230-232.149     Document Type: Article

References (113)

1. J. Derluyn, K. Dessein, G. Flamand, Y. Mois, J. Poortmans, G. Borghs and I. Moerman: J. Cryst. Growth 247 (2003), p. 237
2. E.E. Haller and F.S. Goulding: in Handbook on Semiconductors, Vol. 4, ed. C. Hilsum, North Holland Publ. Co., Chapter 6C.
3. Chi On Chui, Kailash Gopalakrishnan, Peter B. Griffin, James Plummer and Krishna C. Saraswat: Appl. Phys. Lett. 83 (2003), p. 3275
4. Hyoungsub Kim, Chi On Chui, Krishna C. Saraswat, Paul C. McIntyre: Appl. Phys. Lett. 83 (2003), p. 2647
5. K. Kita, K, Kyuno and A. Toriumi: Appl. Phys. Lett. 85 (2004), p. 52
6. C.O. Chui, S. Ramanathan, B.B. Triplett, P.C. McIntyre and K.C. Saraswat: IEEE Electron Device Lett. 23 (2002), p. 473
7. F. Tsui, L. Ma and L. He: Appl. Phys. Lett. 83 (2003), p. 954
8. H. Shang, H. Okorn-Schmidt, J. Ott, P. Kozlowski, S. Stehen, E.C. Jones, H.-S.P. Wong and W. Hanesch: IEEE Electron Device Letters 24 (2003), p. 242
9. H. Shang, K.-L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M. Ieong, H.-S. Wong, K. Guarini and W. Haensch: IEEE Electron Device Lett. 25 (2004), p. 135
10. C.O. Chui, H. Kim, D. Chi, B .B. Triplett, P.C. McIntyre and K.C. Saraswat: Technical Digest International Electron Device Meeting (IEEE, San Francisco, CA, 2002), p. 437
11. K. van der Zanden, D. Schreurs, P. Mijlemans and G. Borghs: IEEE Electron Device Lett. 21 (2000), p. 57
12. E. W. Nelson, M.V. Dolguikh, A.V. Muravjov, E.S. Flitsiyan, T.W. Du Bosq, R.E. Peale, S.H. Kleckley, C.J. Fredricksen and W.G. Vernetson: J. Appl. Phys. 96 (2004), p. 1
13. S. J. Koester, J. D. Schaub, G. Dehlinger, J. O. Chu, Q. C. Ouyang and A. Grill: presented at 62nd Device Research Conference, Notre Dame, Indiana, June 21-23, 2004, to be published in Journal of Electronic Materials.
14. D.S. Yu, C.H. Huang, A. Chin, C. Zhu, M.F. Li, B. Jin Cho and D.-L. Kwong: IEEE Electron Device Lett. 25 (2004), p. 138
15. Shu Nakaharai, Tsutomu Tezuka, Naoharu Sugiyama, Yoshihiko Moriyama, and Shin-ichi Takagi: Appl. Phys. Lett. 83 (2003), p. 3516
16. N.A. Bojarczuk, M. Copel, S. Guha, V. Narayanan, E.J. Preisler, F.M. Ross and H. Shang: Appl. Phys. Lett. 83 (2003), p. 5443
17. F. Letertre, E. Jalaguier, Y. Le Vaillant, P. Perreau, S. Pocas, B. Faure, C. Deguet, N. Kernevez and C. Mazure: to be published in Mat. Res. Soc. Symp. Proc. Ser. 809 (2004).
18. B. Depuydt, G. Raskin, K. Dessein and C. Quaeyhaegens: Institute of Physics Conference Series 171 (2003)
19. W. Geens, K. Dessein, N. Posthuma, G. Flamand, G. Raskin, H. Vercammen, B. De Meulemeester, C. Quaeyhaegens, P. Mijlemans, W. Köstler, G. Strobl, P. Sharps and S. Taylor: presented at the 19th European Photovoltaic Solar Energy conference and exhibition, Paris, 7-11 June 2004.
20. G. Raskin, I. Romandic, L. Wouters, D. Hellin, I. Teerlinck, M. Meuris and P. Mijlemans: to be published in Mat. Res. Soc. Symp. Proc. Ser. 809 (2004).
21. http://substrates.umicore.com
22. N. Van den Bogaert and F. Dupret: J. Cryst. Growth 171 (1997), p. 65 and p. 77
23. V.V. Voronkov: J. Cryst. Growth 59 (1982), p. 625
24. R. Falster, V.V. Voronkov and F. Quast: phys. Stat. Sol. (b) 222 (2000), p. 219
25. J. Vanhellemont: Solid State Phenomena Vols. 69-70 (1999), p. 111
26. J. Vanhellemont, E. Dornberger, D. Gräf, J. Esfandyari, U. Lambert, R. Schmolke, W. von Ammon and P. Wagner: Proceedings of The Kazusa Akademia Park Forum on The Science and Technology of Silicon Materials, Kazusa Akademia Park, Chiba, Japan, (1997), p. 173
27. E. Dornberger, D. Gräf, M. Suhren, U. Lambert, P. Wagner, F. Dupret and W. von Ammon: J. Cryst. Growth 180 (1997), p. 343
28. T. Sinno, R.A. Brown, E. Dornberger and W. von Ammon: J. Electrochem. Soc. 145 (1998), p. 303
29. G. Müller: J. Cryst. Growth 237-239 (2002), p. 1628
30. G. Müller and J. Friedrich: J. Cryst. Growth 266 (2004), p. 1
31. S. Hens et al.: to be published.
32. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Ge/mechanic.html and Si/mechanic.html
33. D. Dew-Hughes: IBM J. Res. Dev. 5 (1961), p. 279
34. I. Yonenaga and K. Sumino: Appl. Phys. Lett. 69 (1996), p. 1264
35. I. Yonenaga and K. Sumino: J. Appl. Phys. 80 (1996), p. 3244
36. T. Kruml, D. Caillard, C. Dupas and J.-L. Martin: J.Phys.: Condens. Matter 14 (2002), p. 12897
37. C. Dupas: PhD thesis 2853, École Polytechnique Fédérale de Lausanne (2003).
38. S. Gan, L. Li and R.F. Hicks: Appl. Phys. Lett. 73 (1998), p. 1068
39. A. Seeger and K.P. Chik: phys. stat. sol. 19 (1968), p. 455
40. D. Shaw: phys. stat. sol. 72 (1975), p. 11
41. N. Stolwijk: Landolt-Börnstein New Series III/22b (1988), p. 439
42. F.C. Frank and D. Tumbull: Phys. Rev. 104 (1956), p. 617
43. N.R. Zangenberg, J. Lundsgaard Hansen, J. Fage-Pedersen and A. Nylandsted Larsen: Phys. Rev. Lett. 87 (2001), p. 125901-1
44. A. Ural, P.B. Griffin and J.D. Plummer: Phys. Rev. Lett. 83 (1999), p. 523
45. S. Mayburg: Phys. Rev. 95 (1954), p. 38
46. R.A. Logan: Phys. Rev. 100 (1956), p. 1455
47. A. Hiraki: J. Phys. Soc. Japan 21 (1966), p. 34
48. F. Hashimoto and Y. Kamiura: J. Phys. Soc. Japan 33 (1972), p. 271
49. H. Letaw, Jr., W.M. Portnoy and L. Slifkin: Phys. Rev. 102 (1956), p. 636
50. P. Penning: Phys. Rev. 110 (1958), p. 586
51. M.W. Valenta and C. Ramasastry: Phys. Rev. 106 (1957), p. 73
52. D.R. Campbell: Phys. Rev. B 12 (1975), p. 2318
53. M. Werner, H. Mehrer and H.D. Hochheimer: Phys. Rev. B 32 (1985), p. 3930
54. H.D. Fuchs, W. Walukiewicz, E.E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A.I. Rudnev, A.V. Tikhomirov and V.I. Ozhogin: Phys. Rev. B 51 (1995), p. 16817
55. J.C. Bourgoin and M. Lannoo: Radiat. Eff. 46 (1980), p. 157
56. J. Räisänen, J. Hirvonen and A. Anttila: Solid-State Electron. 24 (1981), p. 333
57. M. Friesel, U. Södervall and W. Gust: J. Appl. Phys. 78 (1995), p. 5351
58. P. Kringhøj and R.G. Elliman: Appl. Phys. Lett. 65 (1994), p. 324
59. J.O. Kessler: Phys. Rev. 106 (1957), p. 646
60. H. Widmer and G.R. Gunther-Mohr: Helv.Phys.Acta 34 (1961), p. 635
61. R.N. Ghoshtagore: Phys.Rev.Lett. 16 (1966), p. 890
62. A. Seeger, W. Frank and U. Gösele: Inst.Phys.Conf.Ser. 46 (1978), p. 148
63. S. Mitha, S.D. Theiss, M.J. Aziz, D. Schiferl and D.B. Poker: Mat. Res. Soc. Symp. Proc. 325 (1994), p. 189
64. A.G. Tweet: Phys. Rev. 106 (1957), p. 221
65. A. Giese, N.A. Stolwijk and H. Bracht: Appl. Phys. Lett. 77 (2000), p. 642
66. A.G. Tweet: J. Appl. Phys. 30 (1959), p. 2002
67. R.N. Hall: IEEE Trans. Nucl. Sci. 31 (1984), p. 320
68. R. Falster and V.V. Voronkov: Mater. Sci. Eng. B 73 (2000), p. 87
69. E.E. Haller, W.L. Hansen, and F.S. Goulding: Adv. in Physics 30 (1981), p. 93
70. E.E. Haller, W.L. Hansen, P. Luke, R. McMurray and B. Jarrett: IEEE Trans. Nucl. Sci. 29 (1982), p. 745
71. W.L. Hansen, E.E. Haller and P.N. Luke: IEEE Trans. Nucl. Sci. 29 (1982), p. 738
72. W.D. Edwards: J. Electrochem. Soc. 115 (1968), p. 753
73. P. Clauws: Mater. Sci. Eng. B36 (1996), p. 213
74. R.I. Scace and G.A. Slack: J. Chem. Phys. 30 (1959), p. 1551
75. A. van Wieringen and N. Warmoltz: Physica 23 (1956), p. 849
76. R.C. Frank and J.E. Thomas, Jr.: J. Phys. Chem. Solids 16 (1960), p. 144
77. R.D. Westbrook: J. Electrochem. Soc. 121 (1974), p. 1212
78. W. Kaiser and C.D. Thurmond: J. Appl. Phys. 32 (1961), p. 115
79. P. Vanmeerbeek and P. Clauws: Phys. Rev. B 64 (2001), p. 245201-1
80. P. Clauws and P. Vanmeerbeek: Physica B 273-274 (1999), p. 557
81. M. De Bock: master thesis, Faculty of Engineering, Ghent University, Belgium 2002.
82. O. De Gryse, P. Clauws, J. Vanhellemont, O. I. Lebedev, J. Van Landuyt, E. Simoen and C. Claeys: J. Electrochem. Soc. 151 (2004), p. G598
83. A.B. Campbell, J.B. Mitchell, J. Shewchun, D.A. Thompson and J.A. Davies: Can. J. Phys. 53 (1975), p. 303
84. F. Berg Rasmussen, R. Jones and S. Öberg: Phys. Rev. B 50 (1994), p. 4378
85. H.J. Stein: Appl. Phys. Lett. 52 (1988), p. 153
86. F. Berg Rasmussen and B. Bech Nielsen: Mat. Sci. Eng. B 36 (1996), p. 241
87. J.R. Dale and J.C. Brice: Solid-State Electron. 3 (1961), p. 105
88. R.N. Hall: IEEE Trans. Nucl. Sci. 19 (1972), p. 266
89. R.D. Westbrook: Nucl. Instrum. Meth. 108 (1973), p. 335
90. E.E. Haller, P.P. Li, G.S. Hubbard and W.L. Hansen: IEEE Trans. Nucl. Sci. 26 (1979), p. 265
91. N.A. Stolwijk and H. Bracht: Data Compilation in Landolt Börnstein, New Series, Vol. III/33, {Diffusion in Semiconductors and Non-Metallic Solids}, ed. by D. L. Beke, Subvolume A: Diffusion in Semiconductors, Springer, Berlin (1998) p. 1.
92. H. Bracht and N.A. Stolwijk: Data compilation in: Landolt-Börnstein, New Series, Vol. III/41,A2, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds, Part: Group IV Elements, ed. By M. Schulz, Springer, Berlin, 2002.
93. N.A. Stolwijk and H. Bracht: Data compilation in: Landolt-Börnstein, New Series, Vol. III/41,A2, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds, Part: Group IV Elements, ed. By M. Schulz, Springer, Berlin, 2002.
94. W.W. Tyler: Phys. Rev. 96 (1954), p. 226
95. W.W. Tyler and H.H. Woodbury: Phys. Rev. 96 (1954), p. 874
96. De Gryse et al: to be published.
97. J.A. Burton, G.W. Hull, F.J. Morin and J.C. Severiens: J. Phys. Chem. 57 (1953), p. 853
98. N.A. Stolwijk, W. Frank, J. Hölzl, S.J. Pearton and E.E. Haller: J. Appl. Phys. 57 (1985), p. 5211
99. Y. Kamiura, F. Hashimoto, T. Nobusada and Y. Yoneyama: J. Appl. Phys. 56 (1984), p. 936
100. A. Giese, H. Bracht, N.A. Stolwijk and H. Mehrer: Defect and Diffusion Forum Vol. 143-147 (1997), p. 1059
101. A. Giese, N.A. Stolwijk and H. Bracht: Appl. Phys. Lett. 77 (2000), p. 642
102. Landolt-Börnstein, New Series III/22b, Impurities and Defects in Group IV Elements and III-V Compounds, Ed. M. Schulz, Springer Verlag Berlin Heidelberg (1989), pp. 207-438
103. Y. Kamiura and F. Hashimoto: Jap. J. Appl. Phys. 28 (1989), p. 763
104. F.X. Zach, H. Grimmeiss and E.E. Haller: Materials Science Forum Vol. 83-87 (1992), p. 245
105. HH Woodbury and WW Tyler, Phys. Rev. 105 (1957), p.84
106. P. Clauws, G. Huylebroeck, E. Simoen, P. Vermaercke, F. De Smet, J. Vennik, Semicond. Sci. Technol. 4 (1989), p.910
107. G. Huylebroeck, P. Clauws, E. Simoen, J. Vennik, Solid State Commun. 82 (1992), p.367
108. H. Lemke: The Electrochemical Society Proceedings Volume 94-10 (1994), p. 695
109. J. Hornstra: J. Phys. Chem. Sol. 5 (1958), p. 129
110. M. Van Sande, L. Van Goethem, L. De Laet and H. Guislain: Appl. Phys. A 40 (1986), p. 257
111. F.L. Vogel, W.G. Pfann, H.E. Corey and K. Thomas: Phys. Rev. 90 (1953), p. 489
112. G.S. Hubbard and E.E. Haller: Journal of Electronic Materials 9 (1980), p. 51
113. E. Simoen, P. Clauws and J. Vennik: Solid State Communications 54 (1985), p. 1025