Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  De Gryse, O ^a   Clauws, P ^a   Vanhellemont, J ^a   Lebedev, O I ^b   Van Landuyt, J ^b   Simoen, E ^c   Claeys, C ^c,d  

^a GHENT UNIVERSITY   (Belgium)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c IMEC   (Belgium)

^d Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ALGORITHMS; COMPOSITION; COMPUTER SIMULATION; INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; NUMERICAL METHODS; PRECIPITATION (CHEMICAL); SILICON; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

ABSORPTION BANDS; INFRARED ABSORPTION SPECTRA; PRECIPITATE MATRIX; THERMAL TREATMENTS;

SEMICONDUCTOR DOPING;

EID: 5044228987     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1776592     Document Type: Article

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