A transmission electron microscopy in situ study of dislocation mobility in Ge

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12897-12902

  Kruml, Tomas ^a   Caillard, Daniel ^b   Dupas, Corinne ^a   Martin, Jean Luc ^a  

^a EPFL   (Switzerland)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); SINGLE CRYSTALS; STRESSES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION MOBILITY; DOUBLE-ETCH-PIT; HIRTH-LOTHE THEORY;

SEMICONDUCTING GERMANIUM;

EID: 0037122063     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/330     Document Type: Article

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