Magnetization-dependent rectification effect in a Ge-based magnetic heterojunction

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 954-956

  Tsui, F ^a   Ma, L ^a   He, L ^a  

^a University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MAGNETIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

MAGNETIC HETEROJUNCTIONS;

HETEROJUNCTIONS;

EID: 0042378359     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1597967     Document Type: Article

References (11)

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6. Y. K. Yoo and F. Tsui, MRS Bull, 27, 316 (2002).
7. This range of doping concentrations corresponds to Co and Mn doping of up to 10 and 5 at. %, respectively, or a total doping concentration of up to 15 at.%.
8. 2-dependent Fermi surface effects, see G. L. Pearson and H. Suhl, Phys. Rev. 83, 768 (1951).
9. -3 in Ge satisfies the Mott criterion for forming an impurity band.
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