Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors

Journal of Crystal Growth

Volumn 247, Issue 3-4, 2003, Pages 237-244

  Derluyn, Joff ^a   Dessein, K ^b   Flamand, G ^c   Mols, Y ^a   Poortmans, J ^c   Borghs, G ^c   Moerman, I ^a  

^a GHENT UNIVERSITY   (Belgium)

^b UMICORE   (Belgium)

^c IMEC   (Belgium)

Author keywords

A1. Germanium substrate; B1. Tertiary butyl arsine; B3. Single junction solar cell

Indexed keywords

CONTAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SOLAR CELLS; SPECTRUM ANALYSIS;

SINGLE JUNCTION SOLAR CELLS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037212401     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01946-2     Document Type: Article

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