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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 11 B, 2002, Pages

Dislocation reduction in GaN epilayers grown on a GaNP buffer on sapphire substrate by metalorganic chemical vapor deposition

(4) Li, Hongdong b Tsukihara, Masashi a Naoi, Yoshiki a Sakai, Shiro a

a UNIVERSITY OF TOKUSHIMA (Japan)

b NONE

Author keywords

AFM; Dislocation; GaN epilayer; GaNP buffer; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPILAYERS;

GALLIUM NITRIDE;

EID: 20244365150 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l1332 Document Type: Article

Times cited : (8)

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