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Volumn 148, Issue 1-4, 1999, Pages 294-299
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Oxygen implanted silicon investigated by positron annihilation spectroscopy
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Author keywords
Doppler broadening; Positron annihilation; Silicon; SIMOX
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Indexed keywords
ANNEALING;
DEFECTS;
ELECTRIC INSULATING MATERIALS;
ION IMPLANTATION;
OXYGEN;
POSITRONS;
THERMAL EFFECTS;
POSITRON ANNIHILATION SPECTROSCOPY;
SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);
SILICON WAFERS;
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EID: 0033513937
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(98)00844-1 Document Type: Article |
Times cited : (24)
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References (14)
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