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Volumn 148, Issue 1-4, 1999, Pages 294-299

Oxygen implanted silicon investigated by positron annihilation spectroscopy

Author keywords

Doppler broadening; Positron annihilation; Silicon; SIMOX

Indexed keywords

ANNEALING; DEFECTS; ELECTRIC INSULATING MATERIALS; ION IMPLANTATION; OXYGEN; POSITRONS; THERMAL EFFECTS;

EID: 0033513937     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00844-1     Document Type: Article
Times cited : (24)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.