Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN [20]

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 16, 2004, Pages 1-4

  Kim, J J ^a   Makino, H ^b   Kobayashi, K ^c   Takata, Y ^d   Yamamoto, T ^e   Hanada, T ^b   Cho, M W ^b   Ikenaga, E ^c   Yabashi, M ^c   Miwa, D ^d   Nishino, Y ^d   Tamasaku, K ^d   Ishikawa, T ^d   Shin, S ^d   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d Kochi University of Technology ^*  (Japan)

^e KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; GALLIUM;

ARTICLE; CALCULATION; DILUTION; HYBRIDIZATION; MAGNETISM; ROENTGEN SPECTROSCOPY; SEMICONDUCTOR;

EID: 19944427983     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.161315     Document Type: Article

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