SCOPUS 정보 검색 플랫폼

Volumn 113, Issue 1, 1999, Pages 17-21

Model for the Mn acceptor in GaAs

b CNRS (France)

Author keywords

C. Impurities in semiconductors; D. Electronic states (localized); D. Exchange and superexchange

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; ELECTRONIC STRUCTURE; EXCITONS; INFRARED SPECTROSCOPY; MANGANESE; MATHEMATICAL MODELS;

BALDERESCHI-LIPARI EFFECTIVE MASS THEORY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0002600848 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/s0038-1098(99)00438-x Document Type: Article

Times cited : (113)

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