SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 66-69

Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy

(3) Fedorenko, Y G a Afanas'ev, V V a Stesmans, A a

a UNIVERSITY OF LEUVEN (Belgium)

Author keywords

High permittivity oxides; Interface traps; MOS structures

Indexed keywords

ALUMINUM; ANNEALING; CHEMICAL VAPOR DEPOSITION; HEAT TREATMENT; INTERFACES (MATERIALS); MOS CAPACITORS; PASSIVATION; PERMITTIVITY; SEMICONDUCTOR DEVICE STRUCTURES;

ATOMIC-LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); HIGH-PERMITTIVITY OXIDES; INTERFACE TRAPS; MOS-STRUCTURES;

HAFNIUM COMPOUNDS;

EID: 19944413082 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.04.045 Document Type: Conference Paper

Times cited : (5)

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