Impact of nitrogen incorporation on interface states in (1 0 0)Si/HfO 2

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 802-805

  Fedorenko, Y G ^a   Truong, L ^a   Afanas'Ev, V V ^a   Stesmans, A ^a   Zhang, Z ^b   Campbell, S A ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; DEFECTS; ELECTRIC INSULATORS; ELECTRON TRAPS; HYDROGEN; INTERFACES (MATERIALS); NITROGEN; PASSIVATION; SILICON;

HAFNIUM OXIDES; INTERFACE STATES; NITROGEN INCORPORATION; SI BAND GAP; TRAP DENSITY;

HAFNIUM COMPOUNDS;

EID: 14644390308     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.044     Document Type: Conference Paper

References (6)

1. S.A. Campbell, T.Z. Ma, R. Smith, W.L. Gladfelter, and F. Chen Microelectron Eng 9 2001 361
2. A. Stesmans, and V.V. Afanas'ev Appl Phys Lett 82 2003 4074
3. E.H. Nicollian, and J.R. Brews MOS physics and technology 2003 Wiley New York
4. C.N. Berglund IEEE Trans Electron Devices 13 1966 701
5. Y.G. Fedorenko, L. Truong, V.V. Afanas'ev, and A. Stesmans Appl Phys Lett 84 2004 4771
6. A. Stesmans, and V.V. Afanas'ev Appl Phys Lett 80 2002 1957