Evaluating substrate bias on the phase-forming behavior of tungsten thin films deposited by diode and ionized magnetron sputtering

Thin Solid Films

Volumn 484, Issue 1-2, 2005, Pages 83-89

  Chen, G S ^a   Yang, L C ^b   Tian, H S ^a   Hsu, C S ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b Formosa University   (Taiwan)

Author keywords

Phase transitions; Physical vapor deposition; Sputtering; Tungsten

Indexed keywords

ELECTRIC CONDUCTIVITY; INDUCTIVELY COUPLED PLASMA; IONIZATION; MAGNETRON SPUTTERING; PHASE TRANSITIONS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR DIODES; SPUTTERING; SUBSTRATES; THIN FILMS; TUNGSTEN; X RAY DIFFRACTION ANALYSIS;

DEPOSITION PARAMETERS; GLAZING INCIDENCE; PHASE DISTRIBUTION; PHASE-FORMING BEHAVIOR;

PHASE COMPOSITION;

EID: 19944410846     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.02.032     Document Type: Article

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