Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 2, 2004, Pages 281-286

  Chen, G S ^a   Tian, H S ^a   Lin, C K ^a   Chen, Gin Shiang ^b   Lee, H Y ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; KINETIC ENERGY; MAGNETRON SPUTTERING; PHASE TRANSITIONS; PRESSURE EFFECTS; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE X-RAY DIFFRACTION (GIXRD); MOMENTUM TRANSFER;

THIN FILMS;

EID: 1842556429     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1642651     Document Type: Article

References (25)

1. J. Onuki, M. Nihei, M. Suwa, and H. Goshima, J. Vac. Sci. Technol. B 17, 1028 (1999).
2. C. H. Seah, S. Mridha, and L. H. Chan, J. Vac. Sci. Technol. A 17, 1963 (1999).
3. D. L. Windt, J. Vac. Sci. Technol. B 17, 1385 (1999).
4. A. Bensaoula, J. C. Wolfe, A. Ignatiev, F.-O. Fong, and T.-S. Leung, J. Vac. Sci. Technol. A 2, 389 (1984).
5. P. Collot, B. Agius, P. Estrache, M. C. Hugon, M. Froment, J. Bessot, and Y. Crassin, J. Vac. Sci. Technol. A 6, 2319 (1988).
6. A. M. Haghiri-Gosnet, F. R. Ladan, C. Mayeux, and H. Launois, Appl. Surf. Sci. 38, 295 (1989).
7. T. J. Vink, W. Walrave, J. L. C. Daams, A. G. Dirks, M. A. J. Somers, and K. J. A. van den Aker, J. Appl. Phys. 74, 988 (1993).
8. I. A. Weerasekera, S. I. Shah, D. V. Baxter, and K. M. Unruh, Appl. Phys. Lett. 64, 3231 (1994).
9. I. C. Noyan, T. M. Shaw, and C. C. Goldsmith, J. Appl. Phys. 82, 4300 (1997).
10. S. M. Rossnagel, I. C. Noyan, and C. Cabral, Jr., J. Vac. Sci. Technol. B 20, 2047 (2002).
11. J. H. Souk, J. F. O'Hanlon, and J. Angillelo, J. Vac. Sci. Technol. A 3, 2289 (1985).
12. S. I. Shah, B. A. Doele, C. R. Fincher, K. M. Unruh, and I. Weerasekera, J. Vac. Sci. Technol. A 11, 1470 (1993).
13. S. M. Rossnagel, J. Vac. Sci. Technol. B 16, 2585 (1998).
14. M. Arita and I. Nishida, Jpn. J. Appl. Phys., Part 1 32, 1759 (1993).
15. P. Villain, P. Goudeau, J. Ligot, S. Benayoun, K. F. Badawi, and J.-J. Hantzpergue, J. Vac. Sci. Technol. A 21, 967 (2003).
16. S. J. Wang, H. Y. Tsai, S. C. Sun, and M. H. Shiao, J. Electrochem. Soc. 148, G500 (2001).
17. T. Laurila, K. Zeng, J. K. Kivilahti, J. Molarius, and I. Suni, J. Appl. Phys. 91, 5391 (2002).
18. G. S. Chen and S. C. Huang, J. Electrochem. Soc. 148, G424 (2001).
19. S. N. Yoganand, M. S. Raghuveer, K. Jagannadham, L. Wu, A. Karoui, and G. Rozgonyi, Appl. Phys. Lett. 80, 79 (2002).
20. C.-S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, J. E. Greene, and M. Odén, Appl. Phys. Lett. 75, 3808 (1999).
21. H. Wang, A. Tiwari, X. Zhang, A. Kvit, and J. Narayan, Appl. Phys. Lett. 81, 1453 (2002).
22. J. A. Thornton, J. Vac. Sci. Technol. A 4, 3059 (1986).
23. D. L. Smith, Thin-Film Deposition: Principles and Practice (McGraw-Hill, New York, 1995), Chap. 9.
24. S. T. Chen, C. H. Yang, F. Faupel, and P. S. Ho, J. Appl. Phys. 64, 6690 (1988).
25. I.-S. Yeo, P. S. Ho, and S. G. H. Anderson, J. Appl. Phys. 78, 945 (1995).