Infrared absorption spectrum studies of the VO defect in fast-neutron-irradiated Czochralski silicon

Journal of Crystal Growth

Volumn 280, Issue 1-2, 2005, Pages 60-65

  Yang, Shuai ^a   Li, Yangxian ^a   Ma, Qiaoyun ^a   Liu, Lili ^a   Xu, Xuewen ^a   Niu, Pingjuan ^b   Li, Yongzhang ^c   Niu, Shengli ^c   Li, Hongtao ^c  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b TIANJIN POLYTECHNIC UNIVERSITY   (China)

^c CHINA INSTITUTE OF ATOMIC ENERGY   (China)

Author keywords

A1. A center; A1. FTIR; A1. Irradiation defect; A1. Neutron irradiation; B2. Czochralski silicon

Indexed keywords

ABSORPTION; ANNEALING; DEFECTS; DOSIMETRY; IRRADIATION; NEUTRONS; OXYGEN; SPECTRUM ANALYSIS;

A-CENTER; CZOCHRALSKI SILICON; INTERSTITIAL OXYGEN; IRRADIATION DEFECT;

SILICON;

EID: 19844375158     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.046     Document Type: Article

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