Inhibition of neutron irradiation on oxidation stacking faults on the surface of Si wafers

Journal of Crystal Growth

Volumn 160, Issue 3-4, 1996, Pages 250-252

  Li, Yangxian ^a   Ju, Yulin ^a   Liu, Caichi ^a   Xu, Yuesheng ^a   Wang, Hongmei ^a  

^a TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; NEUTRON IRRADIATION; OXYGEN; SEMICONDUCTING SILICON; SILICON WAFERS; SURFACES; THERMOOXIDATION;

CZOCHRALSKI SILICON; NEUTRON IRRADIATED DEFECTS; OXIDATION INDUCED STACKING FAULTS;

STACKING FAULTS;

EID: 0030105063     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00432-7     Document Type: Article

References (6)

1. D.J.D. Thomas, Phys. Status Solidi 3 (1963) 2261.
2. G.R. Booker and W.J. Tunstall, Phil. Mag. 12 (1965).
3. A.G. Wilhelm, J. Appl. Phys. 36 (1965) 2272.
4. T.J. Hattori, Electrochem. Soc. 123 (1976) 945.
5. S.M. Hu, J. Appl. Phys. 45 (1974) 1567.
6. Y.S. Xu, Solid State and Integrated Circuit Technology, Ed. Mo Bangxian (Beijing, 1989) p. 29.