Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 85-89

  Poirier, R ^a   Avalos, V ^b   Dannefaer, S ^b   Schiettekatte, F ^a   Roorda, S ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITY OF WINNIPEG   (Canada)

Author keywords

Defects; Divacancy; Infrared absorption; Ion implantation; Positron annihilation; Silicon

Indexed keywords

ABSORPTION; ANNEALING; BAND STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; PARAMAGNETIC RESONANCE; POSITRON ANNIHILATION SPECTROSCOPY; PROTON IRRADIATION;

ISOTHERMAL ANNEALING;

SEMICONDUCTING SILICON;

EID: 0037906156     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00686-4     Document Type: Conference Paper

References (11)

1. Watkins G.D., Corbett J.W. Phys. Rev. 138:1965;A543.
2. Cheng L.J., Corelli J.C., Corbett J.W., Watkins G.D. Phys. Rev. 152:1966;761.
3. Cheng L.J., Vajda P. Phys. Rev. 186:1969;816.
4. Carton-Merlet F., Pajot B., Vajda P. J. Phys. Lett. 39:1978;L113.
5. Svensson J.-H., Svensson B.G., Monemar B. Phys. Rev. B. 38:1988;4192.
6. Pellegrino P., Lévêque P., Lalita J., Hallén A., Jagadish C., Svensson B.G. Phys. Rev. B. 64:2001.
7. Poirier R., Roorda S., Schiettekatte F., Lalancette M., Zikovsky J. Physica B. 308-310:2001;462.
8. Stein H.J., Vook F.L., Brice D.K., Borders J.A., Picraux S.T. Radiat. Eff. 6:1970;19.
9. R. Krause-Rehberg, H.S. Leipner, Positron annihilation in semiconductors: Defect studies, Springer Series in Solid-state Sciences, Berlin, 1999.
10. Polity A., Börner F., Huth S., Eichler S., Krause-Rehberg R. Phys. Rev. B. 58:1998;10363.
11. Cheng L.J., Lori J. Phys. Rev. 171:1968;856.