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Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 188-192

Complexes of the self-interstitial with oxygen in irradiated silicon: A new assignment of the 936 cm-1 band

(7) Hermansson, J a Murin, L I b Hallberg, T c Markevich, V P b Lindstrom J L a Kleverman, M a Svensson, B G d

a LUND UNIVERSITY (Sweden)

b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS (Belarus)

c SWEDISH DEFENCE RESEARCH AGENCY (Sweden)

d ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Complexes; Low temperature irradiation; LVMs; Oxygen; Self interstitial; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; CRYSTAL GROWTH FROM MELT; INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; OXYGEN; SEMICONDUCTOR GROWTH;

OXYGEN INTERSTITIALS;

SEMICONDUCTING SILICON;

EID: 0034970921 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00426-4 Document Type: Conference Paper

Times cited : (34)

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