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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 132-139

The effects of radiation damage and impurities on void dynamics in silicon

(4) Donnelly, S E a Vishnyakov, V M a Birtcher, R C b Carter, G a

a UNIVERSITY OF SALFORD (United Kingdom)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

Bubbles; Gettering; Helium; Silicon; Voids

Indexed keywords

ANNEALING; BUBBLES (IN FLUIDS); CARBON; COALESCENCE; HELIUM; IMPURITIES; ION IMPLANTATION; OXYGEN; RADIATION DAMAGE; TRANSMISSION ELECTRON MICROSCOPY;

GETTERING; OSTWALD RIPENING; VOID DYNAMICS;

SEMICONDUCTING SILICON;

EID: 0035302862 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00612-1 Document Type: Conference Paper

Times cited : (26)

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