The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 6-9

  Li, Y X ^a   Guo, H Y ^a   Liu, B D ^a   Liu, T J ^a   Hao, Q Y ^a   Liu, C C ^a   Yang, D R ^b   Que, D L ^b  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Defects; A1. Point defects; A1. Radiation; B2. Semiconducting silicon

Indexed keywords

ANNEALING; NEUTRON IRRADIATION; POINT DEFECTS; PRECIPITATION (CHEMICAL); SILICON WAFERS; SUPERSATURATION;

DEFECT CLUSTERS;

CRYSTAL GROWTH FROM MELT;

EID: 0038625268     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00956-4     Document Type: Article

References (11)

1. Cadeo S., Pizzini S., Acciarri M., Cavallini A. Mater. Sci. Semicond. Process. 2:1999;57.
2. Yakimov E., Feklisova D., Castaldini A., Cavallini A., Cadeo S., Pizzini S. Mater. Sci. Semicond. Process. 2:1999;69.
3. Maekawa T., Inoue S., Aiura M., Usami A. Semicond. Sci. Technol. 3:1988;77.
4. Maddalon-Vinante C., Ehret E., Barbier D. J. Appl. Phys. 79:1996;2707.
5. Shimura F. Semicond. Semimet. 42:1994;577.
6. Peibst H., Raidt H. Phys. Status Solidi. 68:1981;253.
7. Tan T.Y., Tice W.K. Philos. Mag. 34:1976;615.
8. Maher D.M., Staudinger A., Patel J.R. J. Appl. Phys. 47:1976;3813.
9. Zhihong Wang, Talid Sinno, Robert A.B., Appl. Phys. Lett. 78 (2001) 180.
10. Li Y.X., Ju Y.L., Liu C.C. J. Crystal Growth. 160:1996;250.
11. Fujimori H. J. Electrochem. Soc. 147:2000;3058.