High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1429-1432

  Kanzaki, Y ^a   Kinbara, H ^a   Kosugi, H ^a   Suda, J ^a   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

(11 20); Channel mobility; MOS; MOSFET; N2O oxidation; Short channel effect

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; NITROGEN OXIDES; OXIDATION; SEMICONDUCTOR DOPING; SILICON CARBIDE; THRESHOLD VOLTAGE;

4H-SIC (11-20) MOSFETS; CHANNEL MOBILITIES; N2O OXIDATION; SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 8744312863     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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