Structural and electronic properties of line defects in GaN

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Elsner, Joachim ^a   Blumenau, Alexander Th ^a   Frauenheim, Thomas ^a   Jones, Robert ^a   Heggie, Malcolm I ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; LUMINESCENCE; PROBABILITY DENSITY FUNCTION; STOICHIOMETRY;

GALLIUM NITRIDE; THREADING EDGE DISLOCATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4243627059     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)