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Volumn 93, Issue 9, 2004, Pages

Nonlinear optical spectroscopy of suboxides at oxidized Si(111) interfaces

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; ENERGY DISSIPATION; HYDROGEN; LASER BEAMS; OXIDATION; RESONANCE; SECOND HARMONIC GENERATION; SILICON; TENSORS; TRANSITION METALS;

EID: 19544370185     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.097402     Document Type: Article
Times cited : (26)

References (24)
  • 13
    • 0033339404 scopus 로고    scopus 로고
    • 2 and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff et al. (Materials Research Society, Pittsburgh)
    • 2 and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff et al., MRS Symposia Proceedings No. 567 (Materials Research Society, Pittsburgh, 1999), p. 343.
    • (1999) MRS Symposia Proceedings , vol.567 , pp. 343
    • Wolfe, D.1
  • 17
    • 4944260600 scopus 로고    scopus 로고
    • S. Bergfeld and W. Daum (to be published)
    • S. Bergfeld and W. Daum (to be published).
  • 19
    • 85088489643 scopus 로고    scopus 로고
    • note
    • (2) α refers to the α component of the transition dipole moment of the resonant two-photon deexcitation and β and γ refer to the β and γ components of the transition dipole moments of the one-photon excitation in the SHG process.
  • 23
    • 4944222513 scopus 로고    scopus 로고
    • note
    • We attribute the weak feature at 3.52 eV in the topmost s/P spectrum to the onset of surface oxidation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.