Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3404-3410

  Fujinami, M ^a   Miyagoe, T ^a   Sawada, T ^a   Suzuki, R ^b   Ohdaira, T ^b   Akahane, T ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DEFECTS; DOPPLER EFFECT; ELECTRIC PROPERTIES; ELECTRON IRRADIATION; ION IMPLANTATION; OXYGEN; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SILICA;

COINCIDENCE DOPPLER BROADENING (CDB); VACANCY-OXYGEN COMPLEXES;

SILICON;

EID: 1942489240     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1652241     Document Type: Article

References (26)

1. Defect Control in Semiconductors, edited by K. Sumino (North-Holland, Amsterdam, 1990).
2. K. Izumi, M. Doken, and H. Ariyoshi, Electron. Lett. 14, 593 (1978).
3. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003).
4. P. Asoka-Kumar, K. G. Lynn, and D. O. Welch, J. Appl. Phys. 76, 4935 (1994), and references therein.
5. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors (Springer, Berlin, 1999).
6. P. Asoka-Kumar, M. Alatalo, V. J. Ghosh, A. C. Kruseman, B. Nielsen, and K. G. Lynn, Phys. Rev. Lett. 77, 2097 (1996).
7. M. Hasegawa, Z. Tang, Y. Nagai, T. Nonaka, and K. Nakamura, Appl. Surf. Sci. 194, 76 (2002).
8. M. Fujinami, Mater. Sci. Forum 255, 218 (1997).
9. A. C. Kruseman, A. van Veen, H. Schut, P. E. Mijnarends, and M. Fujinami, J. Appl. Phys. 90, 1179 (2001).
10. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
11. S. Valkealahti and R. Nieminen, Appl. Phys. A: Solids Surf. 35, 51 (1984).
12. M. Fujinami and N. B. Chilton, J. Appl. Phys. 73, 3242 (1993).
13. P. G. Coleman and A. P. Knights, Appl. Surf. Sci. 149, 82 (1999).
14. R. Krause-Rehberg, F. Börner, F. Redmann, W. Egger, G. Kögel, P. Sperr, and W. Triftshäuser, Appl. Surf. Sci. 194, 210 (2002).
15. A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado, H. Kametani, H. Akiyama, Y. Yamaguchi, and M. Koumaru, Jpn. J. Appl. Phys., Part 1 32, 3682 (1993).
16. A. Uedono, S. Tanigawa, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, and T. Mikado, J. Appl. Phys. 87, 1659 (2000).
17. P. G. Coleman, A. P. Knights, and M. J. Anc, J. Appl. Phys. 93, 698 (2003).
18. R. Suzuki, Y. Kobayashi, T. Mikado, H. Ohgaki, M. Chiwaki, T. Yamazaki, and T. Tomimasu, Jpn. J. Appl. Phys., Part 2 30, L532 (1991).
19. P. Kirkegaard, M. Eldrup, O. E. Mogensen, and N. J. Pedersen, Comput. Phys. Commun. 23, 307 (1981).
20. M. Fujinami, Phys. Rev. B 53, 13047 (1996).
21. A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi, and K. Sumino, Mater. Sci. Forum 175, 423 (1995).
22. M. Hakala, M. J. Puska, and R. M. Nieminen, Phys. Rev. B 57, 7621 (1998).
23. M. Fujinami, T. Sawada, and T. Akahane, Mater. Sci. Forum 363, 52 (2001).
24. M. Fujinami, A. Tsuge, and K. Tanaka, J. Appl. Phys. 79, 9017 (1996).
25. Y. Nagai, T. Nonaka, M. Hasegawa, Y. Kobayashi, C. L. Wang, W. Zheng, and C. Zhang, Phys. Rev. B 60, 11863 (1999).
26. M. Hasegawa, M. Tabata, M. Fujinami, Y. Ito, H. Sunaga, S. Okada, and S. Yamaguchi, Nucl. Instrum. Methods Phys. Res. B 116, 347 (1996).