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Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 218-222

Oxygen-related defects - Positron interaction in Si

(1) Fujinami, M a

a NIPPON STEEL CORPORATION (Japan)

Author keywords

Oxygen; Positron Annihilation; Silicon; Vacancy Oxygen Complexes

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ION IMPLANTATION; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SUPERSATURATION; THERMAL EFFECTS;

VACANCY OXYGEN COMPLEXES; VARIABLE ENERGY POSITRON ANNIHILATION SPECTROSCOPY;

SILICON WAFERS;

EID: 0031333382 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.255-257.218 Document Type: Article

Times cited : (3)

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