Defect studies in semiconductors

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 52-55

  Fujinami, M ^a   Sawada, T ^a   Akahane, T ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Anneal; Coincidence doppler broadening; Defects; Ion implantation; Positron; Silicon; Vacancies; Vacancy impurity complexes

Indexed keywords

ANISOTROPY; COMPLEXATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOPPLER EFFECT; HYDROGEN; ION IMPLANTATION; OXYGEN; POSITRON ANNIHILATION SPECTROSCOPY;

CORE-ELECTRON ANNIHILATION RATE; ELECTRON MOMENTUM DISTRIBUTION; VACANCY HYDROGEN; VACANCY OXYGEN;

SEMICONDUCTING SILICON;

EID: 0035018090     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.52     Document Type: Conference Paper

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