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Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 698-701

Positron annihilation spectroscopy as a diagnostic tool for process monitoring of buried oxide layer formation in Si

(3) Coleman, P G a Knights, A P b,d Anc, M J c,e

a University of Bath (United Kingdom)

b UNIVERSITY OF SURREY (United Kingdom)

c Ibis Technology Corp (United States)

d Bookham Technology (United Kingdom)

e AXCELIS TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ION BEAMS; ION IMPLANTATION; MICROSTRUCTURE; POSITRON ANNIHILATION SPECTROSCOPY;

IMPLANTATION TEMPERATURES; ION DOSE;

SEMICONDUCTING SILICON;

EID: 0037249987 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1525403 Document Type: Article

Times cited : (3)

References (12)

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- Krause, S.¹ Anc, M.J.² Roitman, P.³

2
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- (1997) Microelectron. Eng. , vol.36 , pp. 343
- Revesz, A.G.¹ Hughes, H.L.²

3
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- M. J. Anc, B. Matthews, and R. P. Dolan, Ion Implantation 2000 (IEEE, New York, 2000), p. 265.
- (2000) Ion Implantation 2000 , pp. 265
- Anc, M.J.¹ Matthews, B.² Dolan, R.P.³

4
- 0003903556
- Springer, Berlin
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- (1999) Positron Annihilation in Semiconductors , vol.127
- Krause-Rehberg, R.¹ Leipner, H.S.²

5
- 0002486446
- edited by P. G. Coleman (World Scientific, Singapore)
- A. van Veen, H. Schut, and P. E. Mijnarends, in Positron Beams and their Applications, edited by P. G. Coleman (World Scientific, Singapore, 2000), p. 191.
- (2000) Positron Beams and their Applications , pp. 191
- Van Veen, A.¹ Schut, H.² Mijnarends, P.E.³

6
- 0033713879
- A. P. Knights and P. G. Coleman, Defect Diffus. Forum 183-5, 41 (2000).
- (2000) Defect Diffus. Forum , vol.183 , Issue.5 , pp. 41
- Knights, A.P.¹ Coleman, P.G.²

7
- 0031547910
- A. C. Kruseman, H. Schut, A. van Veen, P. E. Mijnarends, M. Clement, and J. M. M. d. Nijs, Appl. Surf. Sci. 116, 192 (1997).
- (1997) Appl. Surf. Sci. , vol.116 , pp. 192
- Kruseman, A.C.¹ Schut, H.² Van Veen, A.³ Mijnarends, P.E.⁴ Clement, M.⁵ Nijs, J.M.M.D.⁶

8
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- A. C. Kruseman, A. van Veen, H. Schut, P. E. Mijnarends, and M. Fujinami, J. Appl. Phys. 90, 1179 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 1179
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9
- 0001078430
- A. Uedono, S. Tanigawa, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, and T. Mikado, J. Appl. Phys. 87, 1659 (2000).
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10
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- P. G. Coleman, A. P. Knights, and R. M. Gwilliam, J. Appl. Phys. 86, 5988 (1999).
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- Coleman, P.G.¹ Knights, A.P.² Gwilliam, R.M.³

11
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- Knights, A.P.¹ Malik, F.² Coleman, P.G.³

12
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- R. M. Gwilliam, A. P. Knights, E. Wendler, B. J. Sealy, C. P. Burrows, and P. G. Coleman, Mater. Sci. Eng., B B80, 60 (2001).
- (2001) Mater. Sci. Eng., B , vol.B80 , pp. 60
- Gwilliam, R.M.¹ Knights, A.P.² Wendler, E.³ Sealy, B.J.⁴ Burrows, C.P.⁵ Coleman, P.G.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.