Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si

Applied Surface Science

Volumn 149, Issue 1, 1999, Pages 82-86

  Coleman, P G ^a   Knights, A P ^b  

^a UNIVERSITY OF EAST ANGLIA   (United Kingdom)

^b Univ S   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CRYSTAL DEFECTS; DOPPLER EFFECT; ETCHING; ION IMPLANTATION; POSITRONS; SPECTROSCOPY;

DOPPLER BROADENING SPECTROSCOPY; POSITRON ANNIHILATION; POSITRON BEAMS; POSITRON ENERGY;

SEMICONDUCTING SILICON;

EID: 0032646169     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00177-4     Document Type: Article

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