ABAB organization of GeSi (001) islands in multiplanes grown with low pressure chemical vapor deposition

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6175-6182

  Kermarrec, O ^a   Campidelli, Y ^a   Bensahel, D ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; ENCAPSULATION; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICKNESS MEASUREMENT; CRYSTAL ORIENTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CAPPING MATERIALS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON SPACER; SURFACE ORGANIZATION; ISLAND DISTRIBUTION; MATERIAL REORGANIZATION; SELF-ORGANIZATION TRANSITION; SILICON SPACERS;

SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

EID: 19144370699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1806255     Document Type: Article

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