Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 1145-1148

  Hernandez, C ^a   Campidelli, Y ^a   Simon, D ^a   Bensahel, D ^a   Sagnes, I ^a   Patriarche, G ^a   Boucaud, P ^b   Sauvage, S ^b  

^a ORANGE LABS   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-PRESSURE CHEMICAL VAPOR DEPOSITION; QUANTUM CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032613586     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370856     Document Type: Article

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