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Surface Review and Letters

Volumn 6, Issue 1, 1999, Pages 1-6

Ge lateral segregation as a dominant alloying mechanism during low kinetic Si capping of strained Si1-x Gex hut islands

(7) Dentel, D a Bischoff, J L a Kubler, L a Ghica, C b Werckmann, J b Deville, J P b Ulhaq Bouillet, C b

a UNIVERSITÉ DE HAUTE ALSACE (France)

b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033445196 PISSN: 0218625X EISSN: None Source Type: Journal
DOI: 10.1142/S0218625X99000020 Document Type: Article

Times cited : (5)

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