-
1
-
-
0032369088
-
Quantum well intermixing in material systems for 1.5 μm
-
J. H. Marsh, O. P. Kowalski, S. D. McDougall, B. C. Qiu, A. McKee, C. J. Hamilton, R. M. De La Rue, and A. C. Bryce, "Quantum well intermixing in material systems for 1.5 μm," J. Vac. Sci. Technol. A, vol. 16, pp. 810-816, 1998.
-
(1998)
J. Vac. Sci. Technol. a
, vol.16
, pp. 810-816
-
-
Marsh, J.H.1
Kowalski, O.P.2
McDougall, S.D.3
Qiu, B.C.4
McKee, A.5
Hamilton, C.J.6
De La Rue, R.M.7
Bryce, A.C.8
-
2
-
-
0032114589
-
Photonic integrated circuits fabricated using ion implantation
-
Jul./Aug.
-
S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, H. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, "Photonic integrated circuits fabricated using ion implantation," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 4, pp. 772-793, Jul./Aug. 1998.
-
(1998)
IEEE J. Sel. Topics Quantum Electron.
, vol.4
, Issue.4
, pp. 772-793
-
-
Charbonneau, S.1
Koteles, E.S.2
Poole, P.J.3
He, J.J.4
Aers, G.C.5
Haysom, H.6
Buchanan, M.7
Feng, Y.8
Delage, A.9
Yang, F.10
Davies, M.11
Goldberg, R.D.12
Piva, P.G.13
Mitchell, I.V.14
-
3
-
-
0036662299
-
Low-energy ion-implantation-induced quantum-well intermixing
-
Jul/Aug.
-
V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, "Low-energy ion-implantation-induced quantum-well intermixing," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 870-879, Jul/Aug. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.4
, pp. 870-879
-
-
Aimez, V.1
Beauvais, J.2
Beerens, J.3
Morris, D.4
Lim, H.S.5
Ooi, B.S.6
-
4
-
-
0031257832
-
Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion
-
Oct.
-
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, "Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion," IEEE J. Quantum Electron., vol. 33, no. 10, pp. 1784-1793, Oct. 1997.
-
(1997)
IEEE J. Quantum Electron.
, vol.33
, Issue.10
, pp. 1784-1793
-
-
Ooi, B.S.1
McIlvaney, K.2
Street, M.W.3
Helmy, A.S.4
Ayling, S.G.5
Bryce, A.C.6
Marsh, J.H.7
Roberts, J.S.8
-
5
-
-
0032118095
-
Monolithic integration via a universal damage enhanced quantum well intermixing technique
-
Jul./Aug.
-
S. P. McDougall, O. P. Kowalski, C. J. Hamilton, F. Camacho, B. Qiu, M. Kee, R. M. De La Rue, A. C. Bryce, and J. H. Marsh, "Monolithic integration via a universal damage enhanced quantum well intermixing technique," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 4, pp. 636-646, Jul./Aug. 1998.
-
(1998)
IEEE J. Sel. Topics Quantum Electron.
, vol.4
, Issue.4
, pp. 636-646
-
-
McDougall, S.P.1
Kowalski, O.P.2
Hamilton, C.J.3
Camacho, F.4
Qiu, B.5
Kee, M.6
De La Rue, R.M.7
Bryce, A.C.8
Marsh, J.H.9
-
6
-
-
2442556121
-
Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation induced quantum well intermixing
-
May
-
B. S. Ooi, T. K. Ong, and O. Gunawan, "Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation induced quantum well intermixing," IEEE J. Quantum Electron., vol. 40, no. 5, pp. 481-490, May 2004.
-
(2004)
IEEE J. Quantum Electron.
, vol.40
, Issue.5
, pp. 481-490
-
-
Ooi, B.S.1
Ong, T.K.2
Gunawan, O.3
-
7
-
-
0036661969
-
A quantum-well-intermixing process for wavelength-agile photonic integrated circuits
-
Jul./Aug.
-
E. J. Skogen, J. S. Barton, S. P. Denbaars, and L. A. Coldren, "A quantum-well-intermixing process for wavelength-agile photonic integrated circuits," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 863-869, Jul./Aug. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.4
, pp. 863-869
-
-
Skogen, E.J.1
Barton, J.S.2
Denbaars, S.P.3
Coldren, L.A.4
-
8
-
-
0141458346
-
Large blue-shift in InGaAs/InGaAsP laser structure using inductively coupled Argon plasma enhanced quantum well intermixing
-
Jul./Aug.
-
H. S. Djie, J. Arokiaraj, T. Mei, X. H. Tang, L. K. Ang, and D. Leong, "Large blue-shift in InGaAs/InGaAsP laser structure using inductively coupled Argon plasma enhanced quantum well intermixing," J. Vac. Sci. Technol. B, vol. 21, pp. L1-L4, Jul./Aug. 2003.
-
(2003)
J. Vac. Sci. Technol. B
, vol.21
-
-
Djie, H.S.1
Arokiaraj, J.2
Mei, T.3
Tang, X.H.4
Ang, L.K.5
Leong, D.6
-
9
-
-
0036695777
-
High-density plasma enhanced quantum well intermixing in InGaAs/InGaAsP structure using Argon plasma
-
H. S. Djie, T. Mei, J. Arokiaraj, and P. Thilakan, "High-density plasma enhanced quantum well intermixing in InGaAs/InGaAsP structure using Argon plasma," Jpn. J. Appl. Phys., vol. 41, pp. L867-L868, 2002.
-
(2002)
Jpn. J. Appl. Phys.
, vol.41
-
-
Djie, H.S.1
Mei, T.2
Arokiaraj, J.3
Thilakan, P.4
-
10
-
-
0037028314
-
Photonic integration using inductively coupled Argon plasma enhanced quantum well intermixing
-
H. S. Djie, C. Sookdhis, T. Mei, and J. Arokiaraj, "Photonic integration using inductively coupled Argon plasma enhanced quantum well intermixing," Electron. Lett., vol. 38, pp. 1672-1673, 2002.
-
(2002)
Electron. Lett.
, vol.38
, pp. 1672-1673
-
-
Djie, H.S.1
Sookdhis, C.2
Mei, T.3
Arokiaraj, J.4
-
11
-
-
0029275177
-
Integration process for photonic integrated circuits using plasma damage induced layer intermixing
-
B. S. Ooi, A. C. Bryce, and J. H. Marsh, "Integration process for photonic integrated circuits using plasma damage induced layer intermixing," Electron. Lett., vol. 31, pp. 449-451, 1995.
-
(1995)
Electron. Lett.
, vol.31
, pp. 449-451
-
-
Ooi, B.S.1
Bryce, A.C.2
Marsh, J.H.3
-
12
-
-
0000174334
-
Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide
-
M. Schultz, U. Egger, R. Scholz, O. Breitenstein, U. Gosele, and T. Y. Tan, "Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide," J. Appl. Phys., vol. 83, pp. 5295-5301, 1998.
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 5295-5301
-
-
Schultz, M.1
Egger, U.2
Scholz, R.3
Breitenstein, O.4
Gosele, U.5
Tan, T.Y.6
-
13
-
-
0001160920
-
Investigation of reactive ion etching induced damage in GaAs-AlGaAs quantum well structures
-
H. F. Wong, D. L. Green, T. Y. Liu, D. G. Lishan, M. Bellis, E. L. Hu, P. M. Petroff, P. O. Holtz, and J. L. Merz, "Investigation of reactive ion etching induced damage in GaAs-AlGaAs quantum well structures," J. Vac. Sci. Technol. B., vol. 6, pp. 1906-1910, 1988.
-
(1988)
J. Vac. Sci. Technol. B.
, vol.6
, pp. 1906-1910
-
-
Wong, H.F.1
Green, D.L.2
Liu, T.Y.3
Lishan, D.G.4
Bellis, M.5
Hu, E.L.6
Petroff, P.M.7
Holtz, P.O.8
Merz, J.L.9
-
14
-
-
0001222012
-
Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe
-
B. S. Ooi, A. C. Bryce, C. D. W. Wilkinson, and J. H. Marsh, "Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe," Appl. Phys. Lett., vol. 64, pp. 598-600, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 598-600
-
-
Ooi, B.S.1
Bryce, A.C.2
Wilkinson, C.D.W.3
Marsh, J.H.4
-
15
-
-
1242263842
-
Experimental and theoretical analysis of Argon plasma enhanced quantum well intermixing
-
Feb.
-
H. S. Djie, T. Mei, J. Arokiaraj, C. Sookdhis, S. F. Yu, L. K. Ang, and X. H. Tang, "Experimental and theoretical analysis of Argon plasma enhanced quantum well intermixing," IEEE J. Quantum Electron., vol. 40, no. 2, pp. 166-174, Feb. 2004.
-
(2004)
IEEE J. Quantum Electron.
, vol.40
, Issue.2
, pp. 166-174
-
-
Djie, H.S.1
Mei, T.2
Arokiaraj, J.3
Sookdhis, C.4
Yu, S.F.5
Ang, L.K.6
Tang, X.H.7
-
16
-
-
0035929067
-
Minimization of dry etch damage in III-V semiconductors
-
M. Rahman, L. G. Deng, J. Van Den Berg, and C. D. W. Wilkinson, "Minimization of dry etch damage in III-V semiconductors," J. Phys. D, Appl. Phys., vol. 34, pp. 2792-2797, 2001.
-
(2001)
J. Phys. D, Appl. Phys.
, vol.34
, pp. 2792-2797
-
-
Rahman, M.1
Deng, L.G.2
Van Den Berg, J.3
Wilkinson, C.D.W.4
-
17
-
-
36449005753
-
4 reactive ion etching
-
4 reactive ion etching," J. Appl. Phys., vol. 70, pp. 221-224, 1991.
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 221-224
-
-
Lootens, D.1
Van Daele, P.2
Demeester, P.3
Clauws, P.4
-
18
-
-
0001304569
-
Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing
-
P. J. Poole, S. Charbonneau, G. C. Aers, T. E. Jackman, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, "Defect diffusion in ion implanted AlGaAs and InP: consequences for quantum well intermixing," J. Appl. Phys., vol. 78, pp. 2367-2371, 1995.
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 2367-2371
-
-
Poole, P.J.1
Charbonneau, S.2
Aers, G.C.3
Jackman, T.E.4
Buchanan, M.5
Dion, M.6
Goldberg, R.D.7
Mitchell, I.V.8
-
19
-
-
0001024253
-
Effect of superlattices on the low-energy ion-induced damage in GaAs/Al(Ga)As structures: Channeling or diffusion?
-
D. L. Green, E. L. Hu, and N. G. Stoffel, "Effect of superlattices on the low-energy ion-induced damage in GaAs/Al(Ga)As structures: channeling or diffusion?," J. Vac. Sci. Technol. B, vol. 12, pp. 3311-3316, 1994.
-
(1994)
J. Vac. Sci. Technol. B
, vol.12
, pp. 3311-3316
-
-
Green, D.L.1
Hu, E.L.2
Stoffel, N.G.3
-
20
-
-
0042946897
-
Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing
-
S. Janz, M. Buchanan, P. van der Meer, Z. R. Wazilewski, D.-X. Xu, P. Piva, I. V. Mitchell, U. G. Akano, and A. Fiore, "Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing," Appl. Phys. Lett., vol. 72, pp. 3097-3099, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 3097-3099
-
-
Janz, S.1
Buchanan, M.2
Van Der Meer, P.3
Wazilewski, Z.R.4
Xu, D.-X.5
Piva, P.6
Mitchell, I.V.7
Akano, U.G.8
Fiore, A.9
-
21
-
-
0001187624
-
Quasi phase matching in GaAs-AlAs superlattice waveguides through bandgap tuning by use of quantum-well intermixing
-
A. S. Helmy, D. C. Hutchings, T. C. Kleckner, J. H. Marsh, A. C. Bryce, J. M. Arnold, C. R. Stanley, J. S. Aitchison, C. T. A. Brown, K. Moutzouris, and M. Ebrahimzadeh, "Quasi phase matching in GaAs-AlAs superlattice waveguides through bandgap tuning by use of quantum-well intermixing," Opt. Lett., vol. 25, pp. 1370-1372, 2000.
-
(2000)
Opt. Lett.
, vol.25
, pp. 1370-1372
-
-
Helmy, A.S.1
Hutchings, D.C.2
Kleckner, T.C.3
Marsh, J.H.4
Bryce, A.C.5
Arnold, J.M.6
Stanley, C.R.7
Aitchison, J.S.8
Brown, C.T.A.9
Moutzouris, K.10
Ebrahimzadeh, M.11
-
23
-
-
0010998992
-
4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures
-
4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures," J. Vac. Sci. Technol. B, vol. 15, pp. 142-153, 1997.
-
(1997)
J. Vac. Sci. Technol. B
, vol.15
, pp. 142-153
-
-
Pepin, A.1
Vieu, C.2
Schneider, M.3
Launois, H.4
Nissim, Y.5
-
24
-
-
0032120887
-
A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells
-
Jul./Aug.
-
K. S. Chan, Y. H. Wong, E. Y. B. Pun, H. P. Ho, and P. S. Chung, "A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells," IEEE Sel. Topics Quantum Electron., vol. 4, no. 4, pp. 701-705, Jul./Aug. 1998.
-
(1998)
IEEE Sel. Topics Quantum Electron.
, vol.4
, Issue.4
, pp. 701-705
-
-
Chan, K.S.1
Wong, Y.H.2
Pun, E.Y.B.3
Ho, H.P.4
Chung, P.S.5
-
25
-
-
0032115556
-
Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion
-
Jul./Aug.
-
S. K. Si, D. H. Yeo, K. H. Yoon, and S. J. Kim, "Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 4, pp. 619-623, Jul./Aug. 1998.
-
(1998)
IEEE J. Sel. Topics Quantum Electron.
, vol.4
, Issue.4
, pp. 619-623
-
-
Si, S.K.1
Yeo, D.H.2
Yoon, K.H.3
Kim, S.J.4
-
26
-
-
0000484995
-
High-spatial-resolution quantum-well intermixing process in GalnAs/GalnAsP laser structure using pulsed-photoabsorption-induced disordering
-
T. K. Ong, O. Gunawan, B. S. Ooi, Y. L. Lam, Y. C. Chan, Y. Zhou, A. S. Helmy, and J. H. Marsh, "High-spatial-resolution quantum-well intermixing process in GalnAs/GalnAsP laser structure using pulsed-photoabsorption-induced disordering," J. Appl. Phys., vol. 87, pp. 2275-2279, 2000.
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 2275-2279
-
-
Ong, T.K.1
Gunawan, O.2
Ooi, B.S.3
Lam, Y.L.4
Chan, Y.C.5
Zhou, Y.6
Helmy, A.S.7
Marsh, J.H.8
-
27
-
-
0004077714
-
Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures
-
A. S. Helmy, A. C. Bryce, C. N. Ironside, J. S. Aitchison, and J. H. Marsh, "Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures," Appl. Phys. Lett., vol. 74, pp. 3978-3980, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3978-3980
-
-
Helmy, A.S.1
Bryce, A.C.2
Ironside, C.N.3
Aitchison, J.S.4
Marsh, J.H.5
-
28
-
-
0021510295
-
1-y alloys
-
1-y alloys," J. Appl. Phys., vol. 56, pp. 2056-2064, 1984.
-
(1984)
J. Appl. Phys.
, vol.56
, pp. 2056-2064
-
-
Inoshita, T.1
-
29
-
-
0002659123
-
Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures
-
S. J. Yu, H. Asahi, S. Emura, and S. I. Gonda, "Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures," J. Appl. Phys., vol. 70, pp. 204-208, 1991.
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 204-208
-
-
Yu, S.J.1
Asahi, H.2
Emura, S.3
Gonda, S.I.4
-
30
-
-
4243192688
-
Disordering of InGaAs/InP superlattice and fabrication of quantum wires by focused Ga ion beam
-
S. J. Yu, H. Asahi, J. Takizawa, S. Emura, S. Gonda, H. Kubo, C. Hamaguchi, and Y. Hirayama, "Disordering of InGaAs/InP superlattice and fabrication of quantum wires by focused Ga ion beam," J. Vac. Sci. Technol. B, vol. 9, pp. 2683-2686, 1991.
-
(1991)
J. Vac. Sci. Technol. B
, vol.9
, pp. 2683-2686
-
-
Yu, S.J.1
Asahi, H.2
Takizawa, J.3
Emura, S.4
Gonda, S.5
Kubo, H.6
Hamaguchi, C.7
Hirayama, Y.8
-
31
-
-
0032654642
-
Raman intensity of phonon modes in InGaAsP quartenary alloys grown on (100) InP in the region of immiscibility
-
T. Sugiura, N. Hase, Y. Iguchi, and N. Sawaki, "Raman intensity of phonon modes in InGaAsP quartenary alloys grown on (100) InP in the region of immiscibility," Jpn. J. Appl. Phys., vol. 38, pp. 996-1000, 1999.
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, pp. 996-1000
-
-
Sugiura, T.1
Hase, N.2
Iguchi, Y.3
Sawaki, N.4
-
32
-
-
33847596250
-
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
-
D. E. Aspnes and A. A. Studna, "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. Rev. B, vol. 27, pp. 985-1009, 1983.
-
(1983)
Phys. Rev. B
, vol.27
, pp. 985-1009
-
-
Aspnes, D.E.1
Studna, A.A.2
-
33
-
-
36449005456
-
2 capping-induced intermixing
-
2 capping-induced intermixing," Appl. Phys. Lett., vol. 69, pp. 61-63, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 61-63
-
-
Pepin, A.1
Vieu, C.2
Schneider, M.3
Planel, R.4
Bloch, J.5
Assayag, G.B.6
Launois, H.7
Marzin, J.Y.8
Nissimb, Y.9
-
34
-
-
18844439946
-
Integrated external cavity laser
-
N. K. Dutta, T. Cella, A. B. Piccirilli, and R. L. Brown, "Integrated external cavity laser," Appl. Phys. Lett., vol. 49, pp. 1227-1229, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, pp. 1227-1229
-
-
Dutta, N.K.1
Cella, T.2
Piccirilli, A.B.3
Brown, R.L.4
-
35
-
-
36549102986
-
Integrated external cavity GaAs/Al-GaAs lasers using selective quantum well disordering
-
J. Werner, E. Kapon, N. G. Stoffel, E. Colas, S. A. Schwarz, C. L. Schwartz, and N. Andreadakis, "Integrated external cavity GaAs/Al-GaAs lasers using selective quantum well disordering," Appl. Phys. Lett., vol. 55, pp. 540-542, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.55
, pp. 540-542
-
-
Werner, J.1
Kapon, E.2
Stoffel, N.G.3
Colas, E.4
Schwarz, S.A.5
Schwartz, C.L.6
Andreadakis, N.7
-
36
-
-
0032094703
-
Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing
-
Jun.
-
B. C. Qiu, A. C. Bryce, R. M. De La Rue, and J. H. Marsh, "Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing," IEEE Photon. Technol. Lett., vol. 10, no. 6, pp. 769-771, Jun. 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, Issue.6
, pp. 769-771
-
-
Qiu, B.C.1
Bryce, A.C.2
De La Rue, R.M.3
Marsh, J.H.4
-
37
-
-
0031153278
-
CW and mode-locked integrated extended cavity lasers fabricated using impurity free vacancy disordering
-
Jun.
-
A. C. Bryce, F. Camacho, P. Cusumano, and J. H. Marsh, "CW and mode-locked integrated extended cavity lasers fabricated using impurity free vacancy disordering," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 3, pp. 885-892, Jun. 1997.
-
(1997)
IEEE J. Sel. Topics Quantum Electron.
, vol.3
, Issue.3
, pp. 885-892
-
-
Bryce, A.C.1
Camacho, F.2
Cusumano, P.3
Marsh, J.H.4
-
38
-
-
5444230212
-
Reduction of absorption loss in asymmetric twin waveguide laser tapers using Argon plasma-enhanced quantum-well intermixing
-
Oct.
-
Y. Huang, F. Xia, V. M. Menon, S. R. Forrest, and M. Gokhale, "Reduction of absorption loss in asymmetric twin waveguide laser tapers using Argon plasma-enhanced quantum-well intermixing," IEEE Photon. Technol. Lett., vol. 16, no. 10, pp. 2221-2223, Oct. 2004.
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.10
, pp. 2221-2223
-
-
Huang, Y.1
Xia, F.2
Menon, V.M.3
Forrest, S.R.4
Gokhale, M.5
-
39
-
-
17644419991
-
Wavelength monitoring with low-contrast multimode interference waveguide
-
Apr.
-
C. Sookdhis, T. Mei, and H. S. Djie, "Wavelength monitoring with low-contrast multimode interference waveguide," IEEE Photon. Technol. Lett., vol. 17, no. 4, pp. 822-824, Apr. 2005.
-
(2005)
IEEE Photon. Technol. Lett.
, vol.17
, Issue.4
, pp. 822-824
-
-
Sookdhis, C.1
Mei, T.2
Djie, H.S.3
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