Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation-induced quantum-well intermixing

IEEE Journal of Quantum Electronics

Volumn 40, Issue 5, 2004, Pages 481-490

  Ooi, Boon Siew ^a   Ong, Teik Kooi ^b,c   Gunawan, Oki ^b,d  

^a Lehigh University   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c DenseLight Semiconductors Pte Ltd   (Singapore)

^d Princeton University   (United States)

Author keywords

InGaAs InGaAsP; Monolithic integration; Photonic integrated circuits; Pulsed laser irradiation; Quantum well intermixing; Quantum well laser

Indexed keywords

HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; LASER PULSES; MATHEMATICAL MODELS; NEODYMIUM LASERS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

MULTIPLE WAVELENGTH; PULSED LASER IRRADIATION; PULSED PHOTOABSORPTION INDUCED DISORDERING; QUANTUM WELL INTERMIXING;

PULSED LASER APPLICATIONS;

EID: 2442556121     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.826431     Document Type: Article

References (25)

1. J. H. Marsh, "Quantum well intermixing," Semicond. Sci. Technol., vol. 8, pp. 1136-1155, 1993.
2. B. S. Ooi, S. G. Ayling, A. C. Bryce, and J. H. Marsh, "Fabrication of multiple wavelength lasers in GaAs/AlGaAs structures usding a one-step spatially controlled quantum well intermixing technique," IEEE Photon. Technol. Lett., vol. 7, pp. 944-946, Sept. 1995.
3. B. S. Ooi, K. McIlvaney, M. W. Street, A. Saher Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, "Selective quantum well intermixing in GaAs/AlGaAs using impurity free vacancy induced disordering," IEEE J. Quantum Electron, vol. 33, pp. 1784-1793, Oct. 1997.
4. H. S. Lim, V. Aimez, B. S. Ooi, J. Beauvais, and J. Beerens, "A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures," IEEE Photon. Technol. Lett., vol. 14, pp. 594-596, May 2002.
5. C. J. McLean, A. McKee, G. Lullo, A. C. Bryce, R. M. De La Rue, and J. H. Marsh, "Quantum well intermixing with high spatial selectivity using a pulsed laser technique," Electron. Lett., vol. 31, pp. 1285-1286, 1995.
6. B. C. Qiu, A. C. Bryce, R. M. De La Rue, and J. H. Marsh, "Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing," IEEE Photon. Technol. Lett., vol. 10, pp. 769-771, June 1998.
7. T. K. Ong, Y. C. Chan, Y. L. Lam, and B. S. Ooi, "Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed photoabsorption induced disordering," Appl. Phys. Lett., vol. 78, pp. 2637-2639, 2001.
8. B. S. Ooi, C. J. Hamilton, K. McIlvancy, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, "Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation," IEEE Photon, Technol. Lett., vol. 9, pp. 587-589, May 1997.
9. T. K. Ong, B. S. Ooi, Y. L. Lam, Y. C. Chan, Y. Zhou, A. Saher Helmy, and J. H. Marsh, "High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structure using pulsed photoabsorption induced disordering," J. Appl. Phys., vol. 87, pp. 2775-2779, 2000.
10. B. S. Ooi, E. L. Portnoi, C. J. McLean, A. McKee, A. C. Bryce, R. M. De La Rue, and J. H. Marsh, "Direct writing of grating in GaInAs/GaInAsP quantum well using pulsed laser irradiation," in Proc. 8th Int. Conf. Indium Phosphide and Related Material, vol. 8, 1996, pp. 252-255.
11. 1-y and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, 1982.
12. E. H. Li, "Optical properties of an InGaAs-InP interdiffused quantum well," IEEE J. Quantum Electron., vol. 34, pp. 982-990, June 1998.
13. R. J. Borg and G. J. Dienes, An Introduction to Solid State Diffusion. Boston, MA: Academic, 1988.
14. C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, "Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures," Electron. Lett., vol. 28, pp. 1117-1119, 1992.
15. W. Hayes and A. M. Stoneham, Defects and Defect Processes in Nonmetallic Solids. New York: Wiley, 1985.
16. S. J. Fancey, G. S. Buller, J. S. Massa, A. C. Walker, C. J. McLean, A. McKee, A. C. Bryce, J. H. Marsh, and R. M. De La Rue, "Time-resolved photoluminescence microscopy of GaInAs/GaInAsP quantum wells intermixed using a pulsed laser technique," J. Appl. Phys., vol. 79, pp. 9390-9392, 1996.
17. 1-y alloys," J. Appl. Phys., vol. 56, pp. 2056-2063, 1984.
18. S. J. Yu, H. Asahi, S. Emura, S. I. Gonda, and K. Nakashima, "Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures," J. Appl. Phys., vol. 70, pp. 204-208, 1991.
19. T. Sugiura, N. Hase, Y. Iguchi, and N. Sawaki, "Raman scattering study of InGaAsP quaternary alloys grown on InP in the immmiscible region," Jpn. J. Appl. Phys., vol. 37, pp. 544-549, 1998.
20. 1-y quaternary alloys," J. Appl. Phys., vol. 59, pp. 2184-2188, 1986.
21. R. Guenther, Modern Optics. New York: Wiley, 1990, p. 441.
22. D. G. Deppe and N. Holonyak Jr., "Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures," J. Appl. Phys., vol. 64, pp. R93-R113, 1988.
23. A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De LaRue, J. H. Marsh, and C. C. Button, "Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing," IEEE J. Quantum Electron., vol. 33, pp. 45-55, Jan. 1997.
24. J. Werner, E. Kapon, N. G. Stoffel, E. Colas, S. A. Schwarz, C. L. Schwartz, and N. Andreadakis, "Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering," Appl. Phys. Lett., vol. 55, pp. 540-542, 1989.
25. S. D. McDougall, O. P. Kowalski, C. J. Hamilton, F. Camacho, B. C. Qui, M. Ke, R. M. De La Rue, A. C. Bryce and J. H. Marsh, "Monolithic integration via a universal damage enhanced quantum-well intermixing technique," IEEE J. Select. Topics Quantum Electron., vol. 4, pp. 636-646, July/Aug. 1998.