CW and mode-locked integrated extended cavity lasers fabricated using impurity free vacancy disordering

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 885-891

  Bryce, A Catrina ^a,b,d   Camacho, Fernando ^b,e,f   Cusumano, Pasquale ^b,c   Marsh, John H ^a,b  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF PALERMO   (Italy)

^d UNIVERSITY OF DUNDEE   (United Kingdom)

^e UNIVERSITY OF MÁLAGA   (Spain)

^f UNIVERSITY OF KASSEL   (Germany)

Author keywords

Gallium arsenide; Integrated optoelectronics; Mode locked lasers; Quantum wells; Quantum well intermixing; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTAL IMPURITIES; ELECTRIC CURRENTS; ENERGY GAP; INTEGRATED OPTOELECTRONICS; LASER MODE LOCKING; LIGHT ABSORPTION; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

BANDGAP SHIFT; EXTENDED CAVITY MODELOCKED LASERS; IMPURITY FREE VACANCY DISORDERING;

QUANTUM WELL LASERS;

EID: 0031153278     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640642     Document Type: Article

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