|
Volumn 10, Issue 6, 1998, Pages 769-771
|
Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing
|
Author keywords
Indium gallium arsenide phosphide (InGaAsP); Indium phosphide (InP); Integrated optoelectronics; Laser processing; Quantum wells; Quantum well intermixing; Semiconductor lasers
|
Indexed keywords
NEODYMIUM LASERS;
OPTICAL WAVEGUIDES;
Q SWITCHED LASERS;
QUANTUM WELL LASERS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
LASER IRRADIATION;
QUANTUM WELL INTERMIXING;
INTEGRATED OPTOELECTRONICS;
|
EID: 0032094703
PISSN: 10411135
EISSN: None
Source Type: Journal
DOI: 10.1109/68.681478 Document Type: Article |
Times cited : (27)
|
References (5)
|