Monolithic integration via a universal damage enhanced quantum-well intermixing technique

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 636-645

  McDougall, Stewart D ^b,c   Kowalski, Olek P ^b,d,e   Hamilton, Craig J ^b,f   Camacho, Fernando ^b   Qiu, Bocang ^b,g,h   Ke, Maolong ^b   De La Rue, Richard M ^a,b   Bryce, A Catrina ^a,b   Marsh, John H ^a,b  

^a IEEE

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c MARTLESHAM HEATH   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

^e Sharp Laboratories of Europe   (United Kingdom)

^f UNIVERSITY OF THE WEST OF SCOTLAND   (United Kingdom)

^g XI'AN JIAOTONG UNIVERSITY   (China)

^h BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Integrated optoelectronics; Plasma materials processing applications; Quantum well lasers; Sputtering

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; PLASMA APPLICATIONS; POINT DEFECTS; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SILICA;

GALLIUM INDIUM PHOSPHIDE; QUANTUM-WELL INTERMIXING TECHNIQUE;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0032118095     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720474     Document Type: Article

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