Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 619-623

  Si, Sang Kee ^a   Yeo, Deok Ho ^a   Yoon, Kyung Hun ^a   Kim, Sung June ^a  

^a Seoul National University   (South Korea)

Author keywords

Area selectivity; Bandgap tuning; Impurity free vacancy diffusion (IFVD); InGaAsP InP multiquantum well (MQW) structures; Lateral diffusion coefficient; Quantum well intermixing

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

AREA SELECTIVITY; IMPURITY-FREE VACANCY DIFFUSION (IFVD); QUANTUM-WELL INTERMIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032115556     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720471     Document Type: Article

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