Spectroscopic investigation of traps producing current collapse in AlGaN/GaN HEMT structures

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 138-143

  Klein, P B ^a   Binari, S C ^a   Ikossi, K ^a   Wickenden, A E ^b   Koleske, D D ^a   Henry, R L ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRON TRAPS; MESFET DEVICES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOIONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

CURRENT COLLAPSE; GROWTH PRESSURES; HIGH RESISTIVITY (HR); PHOTOIONIZATION SPECTROSCOPY (PS);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34249912373     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e5.2     Document Type: Conference Paper

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