High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 743-747

  Shima, Takayuki ^a,b   Kimura, Shinji ^a   Iida, Tsutomu ^a   Obara, Akira ^a   Makita, Yunosuke ^a   Kudo, Kazuhiro ^b   Tanaka, Kuniaki ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL GROWTH FROM MELT; EMISSION SPECTROSCOPY; ENERGY GAP; MATHEMATICAL MODELS; NITROGEN; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS;

FURNACE ANNEALING; NITROGEN ION DOPING; PHOTOLUMINESCENCE SPECTRA;

ION IMPLANTATION;

EID: 0030565160     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01112-9     Document Type: Article

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