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Volumn 178, Issue 1-2, 1997, Pages 45-55
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Feasibility of the synthesis of AlAsN and GaAsN films by plasma-source molecular-beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
BINARY ALLOYS;
CRYSTAL LATTICES;
FILM GROWTH;
MOLECULAR BEAM EPITAXY;
NITRIDES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SUBSTRATES;
SURFACE ROUGHNESS;
SYNTHESIS (CHEMICAL);
TRANSMISSION ELECTRON MICROSCOPY;
X RAY ANALYSIS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR PLASMAS;
SURFACE ACTIVE AGENTS;
TERNARY SYSTEMS;
HIGH RESOLUTION X RAY ROCKING CURVES;
PSEUDOBINARY ALLOYS;
PLASMA SOURCE MOLECULAR BEAM EPITAXY;
SEMICONDUCTING FILMS;
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EID: 0031150304
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(97)00071-7 Document Type: Article |
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Times cited : (16)
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References (10)
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