Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 158, Issue 4, 1996, Pages 399-402

  Cheng, T S ^a   Foxon, C T ^a   Jenkins, L C ^a   Hooper, S E ^a   Orton, J W ^a   Novikov, S V ^b   Popova, T B ^b   Tret'yakov, V V ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; FILM GROWTH; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; NITROGEN; PHASE SEPARATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ALUMINUM ARSENIC NITRIDE; GALLIUM ARSENIC NITRIDE; NITROGEN CONCENTRATION;

SEMICONDUCTING FILMS;

EID: 0030086337     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00551-X     Document Type: Article

References (9)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10 (1992) 1237.
2. S.E. Hooper, C.T. Foxon, T.S. Cheng, L.C. Jenkins, D.E. Lacklison, J.W. Orton, T. Bestwick, A. Kean, M. Dawson and G. Duggan, J. Crystal Growth, to be published.
3. T.S. Cheng, L.C. Jenkins, S.E. Hooper, C.T. Foxon, J.W. Orton and D.E. Lacklison, Appl. Phys. Lett. 66 (1995) 1509.
4. L.C. Jenkins, T.S. Cheng, C.T. Foxon, J.W. Orton, S.E. Hooper, S.V. Novikov and V.V. Tret'yakov, J. Vac. Sci. Technol., to be published.
5. S.V. Kazakov, S.G. Konnikov and V.V. Tret'yakov, Izv. Akad. Nauk SSSR 55 (1991) 1627.
6. D.R. Lide, Ed., CRC Handbook of Chemistry and Physics (CRC Press, Boca Raton, 1995) pp. 9-51.
7. Y. Seki, H. Watanabe and J. Matsui, J. Appl. Phys. 49 (1978) 822.
8. R.J. Hauenstein, D.A. Collins, X.P. Cai, M.L. O'Steen and T.C. McGill, Appl. Phys. Lett. 66 (1995) 2861.
9. S. Porowski and I. Grzegory, Properties of Group III Nitrides, Ed. J.H. Edgar (INSPEC, London, 1994) p. 74.