SCOPUS 정보 검색 플랫폼

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 729-732

Extrinsic and intrinsic defects at molecular-beam-epitaxy regrown GaAs interfaces

(3) Ky, Nguyen Hong a Martin, D a Reinhart, F K a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CAPACITANCE MEASUREMENT; CARBON; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; VOLTAGE MEASUREMENT;

EPITAXIAL LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033357799 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00624-9 Document Type: Article

Times cited : (1)

References (13)

1
- 0016049737
- A.Y. Cho, F.K. Reinhart, J. Appl. Phys. 45 (1974) 1812.
- (1974) J. Appl. Phys. , vol.45 , pp. 1812
- Cho, A.Y.¹ Reinhart, F.K.²

2
- 0012752409
- D.L. Miller, R.T. Chen, K. Elliott, S.P. Kowalczyk, J. Appl. Phys. 57 (1985) 1922.
- (1985) J. Appl. Phys. , vol.57 , pp. 1922
- Miller, D.L.¹ Chen, R.T.² Elliott, K.³ Kowalczyk, S.P.⁴

3
- 0023963871
- E. Ikeda, H. Hasegawa, S. Ohtsuka, H. Ohno, Jpn. J. Appl. Phys. 27 (1988) 180.
- (1988) Jpn. J. Appl. Phys. , vol.27 , pp. 180
- Ikeda, E.¹ Hasegawa, H.² Ohtsuka, S.³ Ohno, H.⁴

4
- 0024628344
- D. Biswas, P.R. Berger, U. Das, J.E. Oh, P.K. Bhattacharya, J. Electron. Mater. 18 (1989) 137.
- (1989) J. Electron. Mater. , vol.18 , pp. 137
- Biswas, D.¹ Berger, P.R.² Das, U.³ Oh, J.E.⁴ Bhattacharya, P.K.⁵

5
- 0025449361
- E.F. Schubert, J.M. Kuo, R.F. Kopf, J. Electron. Mater. 19 (1990) 521.
- (1990) J. Electron. Mater. , vol.19 , pp. 521
- Schubert, E.F.¹ Kuo, J.M.² Kopf, R.F.³

6
- 36749106768
- R. Dingle, H.L. Störnier, A.C. Gossard, W. Wiegmann, Appl. Phys. Lett. 33 (1978) 665.
- (1978) Appl. Phys. Lett. , vol.33 , pp. 665
- Dingle, R.¹ Störnier, H.L.² Gossard, A.C.³ Wiegmann, W.⁴

7
- 0000538690
- N.H. Ky, J.D. Ganière, M. Gailhanou, F. Morier-Genoud, D. Martin, F.K. Reinhart, Phys. Rev. B 46 (1992) 6947.
- (1992) Phys. Rev. B , vol.46 , pp. 6947
- Ky, N.H.¹ Ganière, J.D.² Gailhanou, M.³ Morier-Genoud, F.⁴ Martin, D.⁵ Reinhart, F.K.⁶

8
- 36449000577
- L. Pavesi, N.H. Ky, J.D. Ganière, F.K. Reinhart, N. Baba-Ali, I. Harrison, B. Tuck, M. Henini, J. Appl. Phys. 71 (1992) 2225.
- (1992) J. Appl. Phys. , vol.71 , pp. 2225
- Pavesi, L.¹ Ky, N.H.² Ganière, J.D.³ Reinhart, F.K.⁴ Baba-Ali, N.⁵ Harrison, I.⁶ Tuck, B.⁷ Henini, M.⁸

9
- 0000185541
- N.H. Ky, F.K. Reinhart, J. Appl. Phys. 83 (1998) 718.
- (1998) J. Appl. Phys. , vol.83 , pp. 718
- Ky, N.H.¹ Reinhart, F.K.²

10
- 0343859299
- N.H. Ky, J.D. Ganière, F.K. Reinhart, B. Blanchard, J. Appl. Phys. 79 (1996) 4009.
- (1996) J. Appl. Phys. , vol.79 , pp. 4009
- Ky, N.H.¹ Ganière, J.D.² Reinhart, F.K.³ Blanchard, B.⁴

11
- 0032613594
- N.H. Ky, F.K. Reinhart, J.D. Ganière, B. Deveaud, B. Blanchard, J. Appl. Phys. 86 (1999) 259.
- (1999) J. Appl. Phys. , vol.86 , pp. 259
- Ky, N.H.¹ Reinhart, F.K.² Ganière, J.D.³ Deveaud, B.⁴ Blanchard, B.⁵

12
- 0024056433
- G. Livescu, D.A.B. Miller, D.S. Chemla, M. Ramaswami, T.Y. Chang, N. Sauer, A.C. Gossard, J.H. English, IEEE J. Quantum Electron. 24 (1988) 1677.
- (1988) IEEE J. Quantum Electron. , vol.24 , pp. 1677
- Livescu, G.¹ Miller, D.A.B.² Chemla, D.S.³ Ramaswami, M.⁴ Chang, T.Y.⁵ Sauer, N.⁶ Gossard, A.C.⁷ English, J.H.⁸

13
- 0003307777
- M. Skowronski, S.T. Neild, R.E. Kremer, Appl. Phys. Lett. 57 (1990) 902.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 902
- Skowronski, M.¹ Neild, S.T.² Kremer, R.E.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.