Characterization of GaN synthesized in N-ion implanted GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 432-436

  Kuriyama, K ^a   Tsunoda, T ^a   Hayashi, N ^b   Takahashi, Yukimi ^c  

^a HOSEI UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c CITIZEN WATCH CO LTD   (Japan)

Author keywords

GaAs; GaN; N ion implantation; Photoluminescence; Raman scattering; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; BINDING ENERGY; CRYSTAL IMPURITIES; ION IMPLANTATION; NITROGEN; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SYNTHESIS (CHEMICAL); X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033513928     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00664-8     Document Type: Article

References (7)

1. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN based Light Emitters and Lasers, Springer, Heidelberg, 1997.
2. X.W. Lin, M. Behar, R. Maltez, W. Swider, Z.L. Weber, J. Washburn, Appl. Phys. Lett. 67 (1995) 2699.
3. L.A. DeLouise, J. Vac. Sci. Technol. A 11 (1993) 609.
4. K. Kuriyama, K. Yokoyama, K. Tomizawa, T. Takeuchi, H. Takahashi, Appl. Phys. Lett. 61 (1992) 843.
5. T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hashimoto, N. Koike, K. Manabe, J. Appl. Phys. 75 (1994) 1098.
6. J. Chastain and R.C. King Jr, Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics, Minnesota, 1995).
7. J. Petalas, S. Logothetidis, S. Boultadakis, M. Alouani, J.S. Willis, Phys. Rev. B 52 (1995) 8082.