Characterization of the local structure of amorphous GaAs produced by ion implantation

Journal of Applied Physics

Volumn 83, Issue 9, 1998, Pages 4610-4614

  Ridgway, M C ^a   Glover, C J ^a   Foran, G J ^b,d   Yu, K M ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d National Laboratory for High Energy Physics   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000310346     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367244     Document Type: Article

References (31)

1. G. L. Olsen and J. A. Roth, in Handbook of Crystal Growth, edited by D. T. J. Heurle (Elsevier, Amsterdam, 1994), p. 255, and references therein.
2. E. Fois, A. Selloni, G. Pastore, Q. M. Zhang, and R. Car, Phys. Rev. B 45, 13378 (1992).
3. C. Molteni, L. Colombo, and L. Miglio, Phys. Rev. B 50, 4371 (1994).
4. H. Seong and L. J. Lewis, Phys. Rev. B 53, 4408 (1996).
5. N. Mosseau and L. J. Lewis, Phys. Rev. Lett. 78, 1484 (1997).
6. J. A. Del Cueto and N. J. Shevchik, J. Phys. C 11, L829 (1978).
7. M.-L. Theye, A. Gheorghiu, and H. Launois, J. Phys. C 13, 6569 (1980).
8. D. Udron, M.-L. Theye, D. Raoux, A.-M. Flank, P. Lagarde, and J.-P. Gaspard, J. Non-Cryst. Solids 137/138, 131 (1991).
9. S. H. Baker, M. I. Manssor, S. J. Gurman, S. C. Bayliss, and E. A. Davis, J. Non-Cryst. Solids 144, 63 (1992).
10. E. P. O'Reilly and J. Robertson, Phys. Rev. B 34, 8684 (1986).
11. J. P. Xanthakis, P. Katsooulakos, and D. Georgiakos, J. Phys.: Condens. Matter 5, 8677 (1993).
12. E. Yablonovitch, in Properties of Gallium Arsenide, 3rd ed., edited by M. R. Bozel and G. E. Stillman (INSPEC, London, 1996), p. 672.
13. J. B. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
14. K. B. Belay, D. J. Llewellyn, and M. C. Ridgway, Appl. Phys. Lett. 69, 2255 (1996).
15. S. M. Heald, in X-Ray Absorption - Principles, Applications, Techniques of EXAFS, SEXAFS, and XANES, edited by D. C. Koningsberger and R. Prins (Wiley, Brisbane, 1988), p. 87.
16. P. J. Ellis and H. Freeman, J. Synchrotron Radiat. 2, 190 (1995).
17. J. J. Rehrs and R. C. Albers, Phys. Rev. B 41, 8139 (1990).
18. E. D. Crazier and A. J. Seary, Can. J. Phys. 59, 876 (1981).
19. E. A. Stern, D. E. Sayers, and F. W. Lytle, Phys. Rev. B 11, 4836 (1975).
20. J. S. Blakemore, J. Appl. Phys. 53, R123 (1982), and references therein.
21. T. Ichikawa, Phys. Status Solidi A 19, 347 (1973).
22. B. D. Sharma and J. Donohue, Z. Kristallogr. 177, 293 (1962).
23. G. N. Greaves, S. R. Elliott, and E. A. Davis, Adv. Phys. 28, 49 (1979).
24. In general, the detection of like-atom bonding in GaAs was inhibited by the similarity in atomic number, and hence backscattering amplitude and phase shift, of the lattice constituents. In contrast, a materials system such as InP is well suited to the study of implantation-induced like-atom bonding. Such measurements are now in progress.
25. C. M. H. Driscoll, A. F. W. Willoughby, J. B. Mullin, and B. W. Straughan, in Gallium Arsenide and Related Compounds - IOP Conference Proceedings No. 24, edited by J. Bok (IOP, London, 1975), p. 275.
26. C. Ascheron, A. Schindler, R. Flagmeyer, and G. Otto, Nucl. Instrum. Methods Phys. Res. B 36, 163 (1992).
27. J. Stuke and G. Zimmerer, Phys. Status Solidi B 49, 513 (1972).
28. M. C. Ridgway, K. B. Belay, D. J. Llewellyn, and A. Claverie, Nucl. Instrum. Methods Phys. Res. B 127/128, 423 (1997).
29. S. Yokoyama, D. Yui, H. Tanigawa, H. Takasugi, and M. Kawabe, J. Appl. Phys. 62, 1808 (1987).
30. K. Yoshino, K. Murakami, S. Yokoyama, and K. Masuda, Appl. Phys. Lett. 54, 2562 (1989).
31. W. G. Opyd, J. F. Gibbons, and A. J. Mardinly, Appl. Phys. Lett. 53, 1515 (1988).